BF909A,215 Allicdata Electronics
Allicdata Part #:

568-5505-2-ND

Manufacturer Part#:

BF909A,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: MOSFET N-CH SOT-143B
More Detail: RF Mosfet N-Channel Dual Gate 800MHz SOT-143B
DataSheet: BF909A,215 datasheetBF909A,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: N-Channel Dual Gate
Frequency: 800MHz
Gain: --
Current Rating: 40mA
Noise Figure: 2dB
Power - Output: --
Voltage - Rated: 7V
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B
Base Part Number: BF909
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BF909A,215 is a transistor device that belongs to the category of Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). FETs and MOSFETs both have tremendous practical use in radio frequency (RF) applications for amplification and switchingThe BF909A,215 is a n-channel MOSFET that operates at a drain-source voltage of 200V and a drain current of 17 amperes. It has a high current gain bandwidth (LC), which is the essential function of MOSFETs. In addition, the high breakdown voltage of 200V provides good protection against device failure. Furthermore, its silicon chip construction and low voltage operation enable low switching costs.The working principle behind BF909A,215transistors is relatively simple, but efficient. It operates on biasing of the source-drain junction to control the current flow between the source and drain by the voltage applied at the gate. Depending on the voltage applied at the gate, either a large majority of current flows between the source and drain (an ‘ON-state’) or almost no current flows (an ‘OFF-state’). This makes them ideal for use in RF applications.BF909A,215 transistors have a variety of applications such as power supplies, high voltage converters, RF amplifiers and switching circuits. The high voltage capability of these devices makes them suitable for use in portable devices, such as mobile phones and laptops. The device is also preferred for applications in electric guitars and other musical instruments as it offers a low noise performance.Due to the low voltage requirement and the high efficiency of the BF909A,215, the device is increasingly being used in consumer electronics, industrial and automotive sectors and many other power handling applications. The low gate-drain capacitance of the transistor significantly reduces switching losses and increases operating speed of the device.In conclusion, the BF909A,215 is a high performance, low voltage, n-channel MOSFET that is preferred for its high current gain band width and low noise performance. The device’s wide range of applications such as converters, switching and amplifiers, makes it an ideal solution for many electronic components and power management solutions.

The specific data is subject to PDF, and the above content is for reference

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