BF904WR,135

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BF904WR,135 is a type of semiconductor Field-Effect Transistor (FET). FETs are a type of transistor that works by modulating the flow of electrons between its source and drain terminals using an electric field. FETs are typically used in radio frequency (RF) electronics given their ability to operate at high frequencies. When compared to traditional bipolar transistors, FETs are able to switch faster and consume less power. Additionally, FETs can be operated in a bidirectional mode, where the directions of electric fields and current flow can be switched rapidly, allowing for more versatility in many applications.

The BF904WR,135 is an N-channel FET, meaning that it can be used for switching high frequencies of positive bi-directional current. It is also a metal-oxide-semiconductor FET, meaning that it uses a metal ion-doped semiconductor material that is reversely biased in a manner that results in two parallel-connected devices which are known as drain and source. The electric field produced between the drain and source controls the current flow in the device, allowing a wide variety of functions (switching, amplification, etc.) to be controlled and performed using the transistor.

The BF904WR,135 is mainly used in wireless communications, such as GPS and Bluetooth headsets. In these applications, the transistor is used for switching, filtering, and amplifying RF signals. Additionally, the BF904WR,135 is used in electronic switching applications for controlling directional current flow. This is mainly used in automotive and aerospace applications.

The working principle of the BF904WR,135 is based on the principles of electronics. The transistor is composed of three terminals, known as the gate, source, and drain. The gate terminal controls the input voltage, which in turn controls the output current between the source and drain terminals. The drain and source terminals are reversely biased with respect to the gate, which means that any voltage applied to the gate terminal will produce an electric field between them. This electric field is what controls the flow of current in the transistor.

The BF904WR,135 is a powerful and versatile semiconductor device. Its main application fields are in wireless communications and electronic switching applications. Its working principle is based on the principles of electronics, where an electric field is produced between the source and drain terminals to control the flow of current in the device. With its high speed switching abilities and low power consumption, the BF904WR,135 is a versatile semiconductor device that is widely used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference