BFP 182 E7764 Discrete Semiconductor Products |
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Allicdata Part #: | BFP182E7764INTR-ND |
Manufacturer Part#: |
BFP 182 E7764 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR NPN RF 12V SOT-143 |
More Detail: | RF Transistor NPN 12V 35mA 8GHz 250mW Surface Moun... |
DataSheet: | BFP 182 E7764 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz |
Gain: | 22dB |
Power - Max: | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 8V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | PG-SOT143-4 |
Base Part Number: | BFP182 |
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The BFP 182 E7764 is a bipolar Junction Transistor (BJT) designed specifically for Radio Frequency (RF) applications. It belongs to the NPN BJT family, and can be used to create circuits in which a small current can control a larger one. As such, it is often used in RF amplifiers, especially in those applications which require high performance.
The BFP 182 E7764 is based on an advanced silicon-germanium substrate and has a triple-layer construction. This design provides a low impedance and results in a very low noise level. The dynamic range and sensitivity of this transistor are further enhanced when used in higher frequencies. This means that the transistor is particularly well suited for RF amplifiers with frequencies ranging from 1GHz to 9GHz.
The BJT also has a wide operational voltage range, which means it can be used for a variety of applications. This includes radio transmitters and receivers, as well as other high-frequency systems. The power output of the transistor is generally high, and can range from tens of microwatts to a few watts.
The working principle of a BJT is relatively simple. It is based on the concept of current amplification, where a small current is controlled by a larger one. This is done using the transistor\'s base emitter junction. When a voltage is applied to this junction, it creates what is called a ‘Base-Emitter Voltage’. This voltage is then used to create a current according to Ohm’s Law. This current is in turn amplified by the transistor\'s collector-emitter junction, which is created by the transistor\'s Collector-Base voltage.
This principle of current amplification is used in many different types of circuits, and it is this principle that makes the BFP 182 E7764 so useful for RF applications. The transistor can be used to create a wide range of circuits for various purposes. For instance, it can be used as a radio transmitter, providing a very efficient way to send radio signals from one device to another.
In addition to its applications in radio communication, the BFP 182 E7764 can also be used in different types of amplifiers. For instance, it can be used as a pre-amplifier, in order to enhance the output of a sound system, or as a power amplifier, to amplify a signal before it is sent to a speaker or other output device.
The BFP 182 E7764 is specifically designed for RF applications, but can also be used in a wide range of other circuits. Its wide operational voltage range and low noise level make it an ideal choice for many types of applications. Additionally, its robust construction and high current gain make it a reliable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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