BFP 640FESD E6327 Discrete Semiconductor Products |
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Allicdata Part #: | BFP640FESDE6327TR-ND |
Manufacturer Part#: |
BFP 640FESD E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 46GHZ 4.7V TSFP-4-1 |
More Detail: | RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mo... |
DataSheet: | BFP 640FESD E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 4.7V |
Frequency - Transition: | 46GHz |
Noise Figure (dB Typ @ f): | 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz |
Gain: | 8B ~ 30.5dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 110 @ 30mA, 3V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, Flat Leads |
Supplier Device Package: | 4-TSFP |
Base Part Number: | BFP640 |
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The BFP 640FESD E6327 is a high-frequency, medium-power, variable gain RF transistor. It is commonly used in radio frequency applications such as wireless communication, radio broadcasting, and audio processing. It is a single-ended device with a maximum output power of 1 watts and a gain of up to 17 dB. The transistor is also capable of working in the frequencies ranging from 90 MHz to 2.4 GHz, making it suitable for a wide range of applications.
The BFP 640FESD E6327 is an NPN transistor, which means that it is composed of three layers of semiconductor. The base of the transistor is the layer that controls the current, the collector is the layer that gathers the current, and the emitter is the layer that releases the current. In order for the transistor to work, it must have a voltage applied to the base, which will then control the amount of current that flows between the collector and the emitter. This current flow is what amplifies a signal, allowing it to be transmitted at a much higher power level.
The gain of the BFP 640FESD E6327 is adjustable and can be set anywhere between -28 dB and 17 dB. This adjustable gain allows the user to fine-tune the performance of the transistor in order to best suit their application. Additionally, this transistor has a maximum DC supply voltage of 28 volts, which makes it suitable for use in a variety of operating conditions.
The BFP 640FESD E6327 has a number of features that make it an attractive choice for radio-frequency applications. First, it has excellent rejection of desensitization, meaning that it will not lose sensitivity when subject to interference or electromagnetic interference. Second, it is capable of handling high-level input signals, allowing for high-speed operation. Lastly, it is highly linear, meaning that it can control the output power with a high degree of accuracy.
In its most basic form, the BFP 640FESD E6327 transistor operates by controlling the flow of current between the collector and the emitter. When a voltage is applied to the base of the transistor, it causes a current to flow between the collector and the emitter, amplifying the signal. This transistor can then be used to amplify a signal at any frequency, allowing for applications such as radio broadcasting, wireless communications, and audio processing.
The BFP 640FESD E6327 is an ideal choice for a wide range of radio-frequency applications, due to its excellent gain, linearity, and rejection of desensitization. With its adjustable gain and its maximum DC supply voltage of 28 volts, this transistor is a great choice for a variety of applications. Furthermore, its high linearity allows for high accuracy when controlling the output power, making it well-suited for applications such as audio processing and wireless communications.
The specific data is subject to PDF, and the above content is for reference
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