BFP 740F E6327 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.7V
Frequency - Transition:	42GHz
Noise Figure (dB Typ @ f):	0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
Gain:	27.5dB
Power - Max:	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 25mA, 3V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	4-TSFP
Base Part Number:	BFP740

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The BFP 740F E6327 is a bipolar junction transistor (BJT) optimised for radiofrequency (RF) applications. Its RF performance is achieved thanks to a process developed by the manufacturer which produces efficient heat resistors and low noise circuits. In this article, the application field and working principle of the BFP 740F E6327 will be examined.

Application Field

The BFP 740F E6327 is designed for use in RF power amplifiers (PA), offering superior power gain and efficiency. In addition to providing an excellent input-output match and high power output, this transistor operates from 900MHz up to a maximum of 2.2GHz. This upper limit makes it a great option for applications such as cellular communications. At higher frequencies, the BFP 740F E6327 maintains good performance, with a low-noise figure of just 1.2dB and good thermal resistors, which makes it ideal for systems operating in the gigahertz frequency range. Furthermore, its total output power can reach up to 25 watts, which is enough to cover most portable communication devices.The BFP 740F E6327 is also suitable for use as an oscillator, as it provides low-phase noise, high linearity and low distortion. This makes it a perfect option for various electronic components such as amplifiers and limiters.

Working Principle

The BFP 740F E6327 is an NPN (negative-positive-negative) device. It operates in four modes of operation: 1. Cutoff: in cutoff mode, no current can flow from the collector to the emitter. 2. Active: in active mode, a small current can flow from the collector to the emitter and a controlled current can be applied to the base for larger current gain. 3. Saturation: in saturation mode, the current is greatly increased due to the increasing amount of current applied to the base. 4. Reverse-active: also referred to as negative bias mode, this mode increases the amount of current flowing from the emitter to the collector.To optimize the performance of the BFP 740F E6327 in all of these modes of operation, the current gain of the transistor is carefully adjusted through a process known as biasing. Through this process, the amount of current entering the collector is controlled to provide optimal performance.

Conclusion

The BFP 740F E6327 is a bipolar junction transistor optimised for RF applications. It can be used in power amplifiers for cellular communication devices, oscillators, amplifiers, and limiters. Its mode of operation consists of four distinct modes, and its performance is optimized through biasing. With an output power of up to 25 watts, the BFP 740F E6327 is a great choice for RF power applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description