BFP 420F E6327 Allicdata Electronics

BFP 420F E6327 Discrete Semiconductor Products

Allicdata Part #:

BFP420FE6327INTR-ND

Manufacturer Part#:

BFP 420F E6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANSISTOR RF NPN 4.5V TSFP-4
More Detail: RF Transistor NPN 5V 35mA 25GHz 160mW Surface Moun...
DataSheet: BFP 420F E6327 datasheetBFP 420F E6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 19.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
Base Part Number: BFP420
Description

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BFP 420F E6327

The BFP 420F E6327 is a surface-mount NPN transistor specifically designed for RF applications. It is manufactured using an advanced high frequency bipolar process, giving it the ability to deliver high power performance and load handling of up to 3W (Typical) and up to 7.5W (PEAK). It is also equipped with a wide operating range of 170 to 2500MHz as well as a high voltage rating of 28V.

Application Field

The BFP 420F E6327 is designed for use in applications such as base station power amplifiers, global system for mobile communication (GSM) and cordless phones, radiolocation systems, and telecommunication receivers. It is known for its low noise, high power performance and its ability to operate across a wide frequency range.

Working Principle

The BFP 420F E6327 is a bipolar junction transistor (BJT); it operates by using three layers of doped semiconductor material. The end layers are known as an emitter, and the middle layer is called the base. Current flows along these layers and an electrical current is used to control the flow. A positive voltage applied to the base pulls the emitter current toward the base and amplifies the signal.

Features and Benefits

The BFP 420F E6327 has many features and benefits to offer. For instance, it has a low noise figure with a high linearity, great stability and good matching. Its high gain is capable of efficient operation and it is able to switch rapidly, making it perfect for radio communication and data transmission. It also has a higher breakdown voltage, which prevents accidental short-circuiting and provides built-in protection for the device.

Conclusion

The BFP 420F E6327 is an excellent choice for those seeking reliable and high-performance RF applications. This transistor offers high power performance, good matching, low noise and a wide operating frequency range. Combined with its stability and protection features, the BFP 420F E6327 is capable of meeting the requirements of a wide range of wireless data and communication applications.

The specific data is subject to PDF, and the above content is for reference

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