BLF7G10L-250,112 Discrete Semiconductor Products

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	920MHz ~ 960MHz
Gain:	19.5dB
Voltage - Test:	30V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.8A
Power - Output:	60W
Voltage - Rated:	65V
Package / Case:	SOT-502A
Supplier Device Package:	LDMOST
Base Part Number:	BLF7G10

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Introduction

BLF7G10L-250,112 is an RF (Radio Frequency) MOSFET (metal-oxide-semiconductor field-effect transistor) from NXP Semiconductors, an American-based semiconductor manufacturer. This transistor is suited for RF amplification applications. It is used in various applications, from commercial wireless communications to industrial wireless applications, within the frequency range of 0.2 - 3 GHz.

Device Characteristics

This device belongs to the L-MOS X family of transistors, which is designed for extremely low noise performance. It has a good breakdown voltage and output power performance, making it ideal for quality RF amplification. The device has a max drain current of 8 A, max drain source voltage of 250 V, and power gain of 10 dB.

Uses and Applications

Due to its combination of ultra-low noise, high power output and wide bandwidth, the BLF7G10L-250,112 is an ideal candidate for applications such as wireless base stations and radio broadcasting, as well as more specialized applications such as radar and medical imaging. Furthermore, its 250V drain-source voltage makes it suitable for high-power applications such as smart grid transceiver designs and direct-control remote power equipment.

Working Principle

The BLF7G10L-250,112 uses a conductive channel of n-type (negative) or p-type (positive) material between source and drain. This type of transistor is capable of operating with very little input power, as the current will flow from the source to the drain without an external voltage.The transistor\'s channel width is controlled by the gate, which can be either an n-type or p-type material, depending on the nature of the channel (n- or p-type). The gate voltage controls the current flowing through the channel, whereby a high gate voltage will result in higher current flow, and a low gate voltage will result in lower current flow.When RF signals are applied to the source and drain of the transistor, the frequency of the signal and the gate voltage control the signal gain through the transistor. This gain is defined by the losses, which are determined by the gate capacitance and the channel resistance.

Conclusion

In summary, the BLF7G10L-250,112 is a high-performance RF MOSFET designed for use in a wide range of RF applications. Its ultra-low noise performance, high power output and wide bandwidth make it suitable for many uses, including wireless base stations, radio broadcasting, radar, medical imaging and smart grid transceivers. Furthermore, its 250V drain-source voltage makes it suitable for high-power direct-control remote power equipment. Finally, the device is controlled by varying the gate voltage and the frequency of the RF signals applied to the source and drain.

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