BLF7G22L-130,112

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The BLF7G22L-130,112 is a high frequency enhancement mode N-Channel MOSFET that has been specifically designed to work in the harsh environment of mobile wireless communication technologies.

The BLF7G22L-130,112 is designed to operate between a voltage of 3V to 5.4V with drain source voltages of 130V and drain current of 22A making it ideal for power applications in mobile systems where higher power, higher drain currents and flexibility are all required along with smaller size.

This particular type of MOSFET is also fully RoHS compliant, meaning all safety standards around hazardous substances as set out by the EU are met. This added safety combined with the high drain currents, low input capacitance and on-resistance, make the BLF7G22L-130,112 a perfect choice for any power amplifier applications needed in mobile communication products.

The BLF7G22L-130,112 works using a metal-oxide-semiconductor field-effect transistors (MOSFET) with an enhancement mode. The advantages of using a metal-oxide-semiconductor field-effect transistors (MOSFET) is that it eliminates many of the issues of other types of transistors, allowing for better switching performance, higher frequency operation and improved compatibility with newer technologies.

In terms of operation, the BLF7G22L-130,112 works by having an oxide gate layer which controls and regulates the voltage across the source and drain, keeping it above a certain threshold. This allows for a wide range of drain currents to be delivered very quickly, with extremely low distortion and minimal power consumption.

The BLF7G22L-130,112 is primarily used in mobile wireless communication systems, providing power to many areas of the network such as antennas, power amplifiers, wireless routers and modems. Its high frequency enhancement mode makes it ideal for these applications due to its ability to support higher frequencies and a wide range of data protocols.

It is also useful in amplifying signals sent from base stations in order to increase the coverage of a wireless network. The low power consumption and low distortion levels mean that it can also be used in energy efficient designs, allowing for a more efficient use of energy.

The BLF7G22L-130,112 is a great choice for any designer looking for power transistors in mobile communication systems. It offers a wide range of features that make it the perfect choice for these types of applications. With its high frequency, low power consumption and low distortion levels, it is the perfect choice for any mobile system where power, flexibility and control are needed.

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