BLF7G22L-160,118

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.11GHz ~ 2.17GHz
Gain:	18dB
Voltage - Test:	28V
Current Rating:	36A
Noise Figure:	--
Current - Test:	1.3A
Power - Output:	43W
Voltage - Rated:	65V
Package / Case:	SOT-502A
Supplier Device Package:	LDMOST
Base Part Number:	BLF7G22

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Introduction

BLF7G22L-160,118 is a field-effect transistor (FET) designed to provide RF power amplification at frequencies up to 160 MHz. It is a NMOS FET with a maximum of 160mW of power output. The device is typically used in high frequency applications such as radio base stations and point-to-point communications systems. Additionally, they are also used in directional radio links, digital radio and satellite applications.

Construction

The device is a built on a silicon substrate and is composed of several layers including the gate, the drain, and the source. The gate consists of a thin layer of silicon dioxide with a gate contact. The drain and source are electrical contacts that make the connection between the gate and the terminals.

Properties

The device has a maximum frequency of 160 MHz and a maximum power output of 160 mW. The device has a higher voltage breakdown than other field effect transistors, meaning it can handle higher voltages. The maximum drain-source voltage (Vds) is 2.5 V and the reverse leakage current (Idr) is 1 µA. It also has an excellent power gain (Gp). The BLF7G22L-160,118 is sensitive to heat and has a maximum junction temperature of 175 °C.

Application Field

Due to their high frequency, high voltage breakdown and excellent power gain levels, the BLF7G22L-160,118 is well suited for applications such as high frequency base stations, digital radio and satellite applications. Additionally, because of its low leakage current, the device is well suited for mobile radio applications.

Working Principle

The working principle of a field effect transistor (FET) is based on applying a voltage to the gate, which creates a conductive channel between the source and the drain. This creates a current flow in the channel, which then acts to amplify the input voltage. The amount of amplification is dependent on the device’s characteristics, such as its gate capacitance, gate-source capacitance, drain-source capacitance, gate-drain capacitance, and gate-drain voltage ratio.

Conclusion

The BLF7G22L-160,118 is a field-effect transistor (FET) well suited for high frequency applications such as radio base stations and point-to-point communications systems. It has a maximum frequency of 160 MHz and a maximum power output of 160 mW. The device has an excellent power gain and is sensitive to heat. The working principle of FET is based on applying a voltage to the gate, which creates a conductive channel between the source and the drain. This allows for a current flow, thereby amplifying the input voltage.

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