BLF7G15LS-300P,112

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BLF7G15LS-300P is a high quality wideband n-channel gallium nitride (GaN) field-effect transistor (FET). The device is designed to offer superior performance in high-power applications such as RF transmitters, base station amplifiers, wireless infrastructure, public safety, test & measurement and military/aerospace.

The BLF7G15LS-300P is a high-power transistor designed to meet the performance needs of high-end applications by providing exceptional linearity and power handling capability. This device operates over a wide frequency range from 300MHz to 10GHz and offers excellent output power capability at 10 Watts with 26 dB gain, using the power up Mode Class A. The wideband feature of the device makes it ideal for multiple frequency applications.

The GaN-based technology of the BLF7G15LS-300P allows for improved efficiency, higher gain than other technologies, lower power loss, better temperature stability, and wider frequency range compared to the traditional devices. The device is designed to yield superior results when compared to devices based on other non-GaN technologies like gallium arsenide, silicon, and silicon carbide.

In addition to the superior performance, the BLF7G15LS-300P offers superior reliability and is a cost-competitive solution. The device also features a SCALE Suite Source Code feature that makes it ideal for design, optimization, and repeatable performance of complex RF applications.

The working principle of the BLF7G15LS-300P is based on the principle of a field-effect transistor. The device utilizes a gate and source terminal for the control of an electrical field that affects the two regions of conduction. The device includes a gate terminal connected between two parallel plates with a voltage source, source terminal, and drain terminal. The gate terminal controls the flow of electrons between the drain and source terminals. The device also utilizes a reverse-biased depletion region to control the flow of electrons. When the reverse bias voltage is applied to the gate terminal, the gate forms a channel in the depletion region that allows electrons to flow between the drain and source terminals.

The BLF7G15LS-300P is a versatile device due to its wide band operation and excellent linearity characteristics. This device is an ideal choice for high power RF transmitters and amplifiers, wireless infrastructure, public safety, test & measurement, and military/aerospace applications. The application fields of the BLF7G15LS-300P are numerous given the wide band performance and cost competitiveness.

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