| Allicdata Part #: | BLF7G27LS-140,112-ND |
| Manufacturer Part#: |
BLF7G27LS-140,112 |
| Price: | $ 73.72 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF FET LDMOS 65V 16DB SOT502B |
| More Detail: | RF Mosfet LDMOS 28V 1.3A 2.5GHz ~ 2.7GHz 16.5dB 30... |
| DataSheet: |  BLF7G27LS-140,112 Datasheet/PDF |
| Quantity: | 1000 |
| 60 +: | $ 67.02000 |
Specifications
| Series: | -- |
| Packaging: | Tube |
| Part Status: | Last Time Buy |
| Transistor Type: | LDMOS |
| Frequency: | 2.5GHz ~ 2.7GHz |
| Gain: | 16.5dB |
| Voltage - Test: | 28V |
| Current Rating: | 28A |
| Noise Figure: | -- |
| Current - Test: | 1.3A |
| Power - Output: | 30W |
| Voltage - Rated: | 65V |
| Package / Case: | SOT-502B |
| Supplier Device Package: | SOT502B |
| Base Part Number: | BLF7G27 |
Description
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The BLF7G27LS-140,112 device is a powerful tool in the field of RF (radio frequency) transistors. It is a member of a family of devices known as field-effect transistors (or FETs). These kind of transistors are incredibly useful in a number of electronic applications, particularly those that require high-frequency signals and high-power output. In this article, we will explore the application field and working principle of the BLF7G27LS-140,112 device.
Application Field
The BLF7G27LS-140,112 device can be used in various applications including RF Amplifiers, RF receivers and RF power dividers. It is ideal for use in high-power and high-frequency applications such as radio broadcasting and other wireless communications systems. Its high-power output and high-frequency characteristics make it an ideal choice for many types of applications. Some of the most common applications for the BLF7G27LS-140,112 device are:- High-power RF amplifiers.
- High-frequency RF receivers.
- High-power RF power dividers.
- Wireless communications systems.
- Antenna systems.
- RF ON/ OFF switches.
Working Principle
The primary function of the BLF7G27LS-140,112 device is to convert a high-frequency signal into a low-frequency one (or vice versa). This is achieved through the use of a field effect transistor (FET). A FET is a type of transistor that is constructed using gates and channels. In order to use the BLF7G27LS-140,112 device properly, it must be connected to a power source and a signal source. The power source supplies the voltage necessary to create the field within the FET and the signal source provides the input to be modulated. The input is then modulated by the FET, which controls the amount of current passing through the device. The modulation of the high-frequency signal is accomplished by the application of a DC bias voltage to the gate of the FET. This bias voltage is used to create a depletion region within the FET, which allows for the modulation of the high-frequency signal. Once the modulation is accomplished, the output frequency is reduced and can be used in a variety of applications.Conclusion
The BLF7G27LS-140,112 device is a powerful tool in the field of RF transistors. It is ideal for use in high-power and high-frequency applications, such as radio broadcasting and other wireless communications systems. Its primary function is to convert a high-frequency signal into a low-frequency one, which is achieved through the use of a field effect transistor. In order to use the BLF7G27LS-140,112 device properly, it must be connected to a power source and a signal source.The specific data is subject to PDF, and the above content is for reference
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| BLF7G22LS-200,118 | Ampleon USA ... | 59.61 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
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| BLF7G20LS-200,112 | Ampleon USA ... | 67.43 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF7G27LS-140,118 | Ampleon USA ... | 68.57 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
| BLF7G27LS-150P,118 | Ampleon USA ... | 73.3 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
| BLF7G27LS-140,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
| BLF7G27L-135,112 | Ampleon USA ... | 73.72 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
| BLF7G10LS-250,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
| BLF7G24LS-160P,118 | Ampleon USA ... | 74.94 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF7G24LS-160P,112 | Ampleon USA ... | 78.95 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF7G20LS-250P,118 | Ampleon USA ... | 82.73 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF7G22LS-250P,118 | Ampleon USA ... | 85.68 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
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| BLF7G22LS-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
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| BLF7G22LS-160,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
| BLF7G20LS-140P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
| BLF7G20LS-140P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
| BLF7G22L-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF7G22L-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
| BLF7G20L-90P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
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