BLF7G20L-90P,118 Allicdata Electronics
Allicdata Part #:

BLF7G20L-90P,118-ND

Manufacturer Part#:

BLF7G20L-90P,118

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 19.5DB SOT1121A
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 550mA 1....
DataSheet: BLF7G20L-90P,118 datasheetBLF7G20L-90P,118 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 1.81GHz ~ 1.88GHz
Gain: 19.5dB
Voltage - Test: 28V
Current Rating: 18A
Noise Figure: --
Current - Test: 550mA
Power - Output: 40W
Voltage - Rated: 65V
Package / Case: SOT-1121A
Supplier Device Package: LDMOST
Base Part Number: BLF7G20
Description

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BLF7G20L-90P,118 is a type of radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) device. It is among the most widely used semiconductor devices for radio frequency transmission and processing applications since 1950s.

History of RF MOSFETs

The metal-oxide-semiconductor field-effect transistor was first invented by two physicists at Bell Laboratory, John Backus and Frank Wanlass in 1959. Since then, it has developed rapidly and has been widely used in the fields of communication and wireless technology.

Application Field of BLF7G20L-90P,118

BLF7G20L-90P,118 has many applications, primarily as a switch in radio frequency transmission and processing. This is due to its capability of extreme frequencies and power handling capability. For example, it can be used for base station amplifiers in the mobile phone industry, mobile phone loop amplifiers for low power applications, radar, satellite and mobile communication systems. It can also be used in television transmission and processing applications, as well as in the fields of avionics and medical equipment.

Working Principle of BLF7G20L-90P,118

The working principle of the BLF7G20L-90P,118 is by using the gate bias voltage to control the current flow between the source and the drain. When the gate voltage reaches a certain threshold, the transistor will be turned on and current will flow from the source to the drain. On the other hand, when the gate voltage falls below the threshold, the transistor will be turned off and no current will flow.

In addition, the MOSFET also features good input impedance and low output impedance, which makes it ideal for applications such as amplifying, switching and linearizing. Moreover, as the device is operated at radio frequencies, its important to maintain low-level noise and low power consumption.

Conclusion

In conclusion, BLF7G20L-90P,118 is a radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) device. It is widely used for radio frequency transmission and processing applications and have many applications, primarily as a switch. It is operated by using the gate bias voltage to control the current flow between the source and the drain and offers good input impedance and low output impedance, which makes it ideal for applications such as amplifying, switching and linearizing.

The specific data is subject to PDF, and the above content is for reference

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