BLF7G10LS-250,112

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BLF7G10LS-250,112 is a small signal surface mount enhancement mode N-channel RF Field Effect Transistor (or RF FET) designed specifically for broadband microwave applications. It is a frequency-agile amplifier and it offers good linearity, great stability, and good gain flatness over a wide temperature range.

The device consists of a cascode amplifier section, which consists of an N-type short gate supply, a DC voltage source, and a third N-type short gate transistor. This device is designed to operate at frequencies up to 10 GHz. The device is designed to produce high gain and low noise figures, allowing it to be used in a wide variety of applications.

The BLF7G10LS-250,112 is primarily used in wireless systems, where it is used as a low noise amplifier in high-frequency RF links. It is also used for local oscillator circuit design for switching and frequency conversion applications, and for antenna design, as well as for filtering and linear amplification.

The BLF7G10LS-250,112 has an internal impedance of 1 O/cm2. This makes it an ideal choice for powering high-frequency microwave components, including amplifiers and waveguide systems. The device also offers good linearity, with a gain flatness of 1.2 dB over a frequency range of 0.1 – 10 GHz.

The BLF7G10LS-250,112 is designed to operate with a supply voltage of 8 V, with a maximum current of 0.7 A. The device also has a maximum operating temperature of 175 °C, allowing it to operate in harsh environments.

The BLF7G10LS-250,112 is often used in conjunction with other components to form a linear low-noise amplifier. To create a linear low-noise amplifier, the device is connected to a load, such as an inductor or resistor. The impedance of the load is then adjusted to match the impedance of the device, which helps to minimize distortion.

The working principle of the BLF7G10LS-250,112 is based on the principle of field-effect transistor (FET) technology. This device works by using an internal gate voltage to control the current flow across the channel. When a voltage is applied to the gate, the current is increased and vice versa.

The BLF7G10LS-250,112 is an ideal choice for many RF applications, such as microwave amplifiers, filters, antennas, and local oscillators. Its compact size and low noise figure make it very attractive for use in space-constrained wireless systems.

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