Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.5GHz ~ 2.7GHz
Gain:	16.5dB
Voltage - Test:	28V
Current Rating:	37A
Noise Figure:	--
Current - Test:	1.2A
Power - Output:	30W
Voltage - Rated:	65V
Package / Case:	SOT539A
Supplier Device Package:	SOT539A
Base Part Number:	BLF7G27

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BLF7G27L-150P,112 application field and working principle

The BLF7G27L-150P,112 is a surface mount RF power Field Effect Transistor (FET) offering exceptional gain and efficiency. This transistor was designed for high power surface mount applications in which thermal stability is required.

Applications

The BLF7G27L-150P,112 is an ideal transistor for radio frequency applications, such as radio transceivers and amplifiers. The device is rated to operate up to 150 watts and is designed to provide gain and efficiency in the frequency range of 27-28 GHz. In addition, it can be used in power amplifiers, power converters, switches, and active antenna systems.

Working Principle

The BLF7G27L-150P,112 is a type of field effect transistor that uses an electric field to control the conductance of a channel of electrons. This type of transistor is made of three layers of material: the source, the gate, and the drain. The voltage applied to the gate determines the amount of current that passes through the channel. When the voltage is increased, the current increases (an “on” state) and when the voltage is decreased, the current decreases (an “off” state).In RF applications, the BLF7G27L-150P,112 can provide high gain, low noise, and high efficiency. Due to this, the transistor is well-suited for radio frequency amplifiers, power mixing, and power conversion. The device offers excellent thermal stability, allowing it to be used in high power applications without experiencing thermal runaway.

Other Features

Other features of the BLF7G27L-150P,112 include low thermal resistance, high voltage breakdown, low VSWR (voltage standing wave ratio), and excellent input and output matching. Furthermore, the device has an internal RF ballast, allowing it to withstand high power and deliver consistent power over temperature.

Conclusion

Overall, the BLF7G27L-150P,112 is an ideal power FET for high power surface mount applications. It is designed to provide exceptional gain and efficiency in the frequency range of 27-28 GHz, and is well-suited for use in radio frequency applications such as radio transceivers, amplifiers, switches, and active antenna systems. The device also has excellent thermal stability, allowing it to withstand high power without experiencing thermal runaway.

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