BLF7G27LS-90P,118

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A RF (radio frequency) MOSFET (metal–oxide–semiconductor field-effect transistor) is an active device with a source and a drain pin, which is suited for operation at microwave frequencies. In recent times, these have been used for applications in the field of radio communications, wireless communications and high-frequency switching applications.

The BLF7G27LS-90P is a RF MOSFET, produced by RFMD, with an operating frequency range of 1.7-2.2 GHz. It is a N-type enhancement-mode device, with a low noise figure, good gain, excellent power capability and low distortion. It is available in a 3 mm x 3 mm x 0.7 mm package, with a single-ended RF input port and dual-ended RF output port. The device has a drain efficiency of 18dB, a source efficiency of 25dB, a noise figure of 0.5dB, and an input-to-output isolation of 18dB.

The BLF7G27LS-90P is a versatile device and can be used in a wide range of applications, such as automotive sensors, base station amplifiers and front-end modules for wireless receivers. It can also be used for high-speed switching applications, such as switches, attenuators, filters and duplexers. The device is also ideal for use in RF applications, such as RF power amplifiers and wideband receivers.

The BLF7G27LS-90P operates on the principle of the metal–oxide–semiconductor field-effect transistor (MOSFET). The MOSFET is essentially a four-terminal device, made up of an insulated gate, a source, a drain and a body. The current in the drain and the source is controlled by applying a voltage to the gate. By using a MOSFET, the current in the drain can be regulated with an extremely small gate current, resulting in a low-noise and low-power device.

The BLF7G27LS-90P utilizes the low-noise and low-power characteristics of the MOSFET to provide excellent functionality in a wide range of applications. The device is optimized for use at microwave frequencies and offers a good noise figure, a low distortion, good power efficiency and a high input-to-output isolation. It is a versatile device and can be used for RF power amplifiers, wideband receivers and high-speed switching applications.

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