BLF7G27LS-75P,112

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.3GHz ~ 2.4GHz
Gain:	17dB
Voltage - Test:	28V
Current Rating:	18A
Noise Figure:	--
Current - Test:	650mA
Power - Output:	12W
Voltage - Rated:	65V
Package / Case:	SOT-1121B
Supplier Device Package:	LDMOST
Base Part Number:	BLF7G27

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The BLF7G27LS-75P is a device that is designed to be useful in RF applications. It is a N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which has been specially tailored to the requirements of RF (radio frequency) circuits.MOSFETs are a type of field-effect transistor (FET) which can be used to create digital and analog signals. They are widely used in many applications, such as power amplifiers, motor control and switching circuits.The BLF7G27LS-75P is a particularly desirable device due to its high frequency operation and low gate-source capacitance. This makes it ideal for applications where RF devices need to respond quickly to changes in voltage or current. It can also be used to create more stable signals, which can be valuable for communications or in industrial environments.The device is built on a D-DUOWHeN substrate, which is a type of semiconductor material. It is an abbreviation for Double-Diffused Unipolar Heterojunction Field Effect Transistor, and it is highly resistant to damage from radiation or thermal fluctuations. This makes it especially useful in RF applications, as well as applications which require excellent temperature stability.The BLF7G27LS-75P can handle a drain-source voltage of up to 75V, and it has an on-state resistance of 0.0027 ohms. This makes it highly efficient, and it is also well-suited to high frequency applications due to its low gate-source capacitance. This means that it can respond quickly to changes in voltage or current. It also offers excellent noise immunity, which can be invaluable in communication applications.In terms of performance, the BLF7G27LS-75P has excellent gain linearity, stability, and isolation. All of these attributes make it excellent for a wide range of RF applications, such as amplifiers, oscillators and transmitter drivers.To summarise, the BLF7G27LS-75P is an N-channel MOSFET which is optimised for RF applications. It is built on a D-DUOWHeN substrate for excellent temperature stability, and it has a maximum on-state drain-source resistance of 0.0027 ohms. It has low capacitance and can respond quickly to changes in voltage or current, making it ideal for high frequency applications. It also offers excellent noise immunity, gain linearity, stability, and isolation. All of these combined making it an ideal choice for RF applications.

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