Allicdata Part #: | BLF7G24LS-100,118-ND |
Manufacturer Part#: |
BLF7G24LS-100,118 |
Price: | $ 39.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18DB SOT502B |
More Detail: | RF Mosfet LDMOS 28V 900mA 2.3GHz ~ 2.4GHz 18dB 20W... |
DataSheet: | BLF7G24LS-100,118 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 36.25020 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.3GHz ~ 2.4GHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | 28A |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 20W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
Base Part Number: | BLF7G24 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.When it comes to transistors and field effect transistors (FETs), the BLF7G24LS-100,118 is one of the most widely used and versatile in the RF (radio frequency) class. This high-powered transistor, manufactured by Bydlo Electronic Components, is a popular choice for many applications due to its many favorable features and powerful performance. With its excellent handle voltage and strong safe standing power, it can handle a variety of tasks.
The BLF7G24LS-100,118 transistor is a large-signal, low-noise and low-dissipation short-channel mode depletion-mode NPN field effect transistor. This type of transistor is designed to provide high frequency switching, moderate-power amplification and voltage regulation. This versatile transistor is also commonly used in RF amplifiers, local oscillators, high-gain low-noise amplifiers, and other RF and analogue circuits.
The major components of the BLF7G24LS-100,118 transistor are the drain terminal (D), the source terminal (S), and the gate terminal (G). The gate is the terminals is used to control the flow of current in the transistor and is connected to the gate source voltage. The source terminal provides the electrons that will flow through the transistor, and the drain terminal is the output of the transistor. Together these three terminals operate to control and amplify the current.
The BLF7G24LS-100,118 transistor features a drain-source breakdown voltage of 28V with a drain-source voltage of 7V at a drain current of 6.4A. The gate-source voltage of 4V can provide a maximum drain-source on-state drain volatge. It also has a low gate input impedance and a high frequency response. This combination of features makes it a very useful device in a broad range of applications.
The BLF7G24LS-100,118 transistor offers several advantages over other FETs and MOSFETs. It is designed to provide low capacitance, low noise and high dynamic range. This makes it suitable for various applications, including RF applications in which low noise and low capacitance are required. It also offers low thermal resistance, making it an excellent choice for power applications in which thermal resistance is important.
The BLF7G24LS-100,118 transistor can be used in a variety of RF and analogue circuit applications. These include power amplifiers, local oscillators, low-noise amplifiers, RF preamplifiers, voltage regulators and more. It can even be used as a switch or amplifier in some applications. Because of its versatile features and its appropriateness for a range of different applications, it is quickly becoming one of the most popular choice for transistors and FETs.
The BLF7G24LS-100,118 transistor is a reliable and powerful device that can handle a wide range of applications. It features excellent handle voltage, strong safe standing power, high frequency response and low capacitance, making it an ideal choice for many applications. With its strong performance and versatility, it isn’t hard to see why the BLF7G24LS-100,118 transistor is becoming one of the most popular transistors in the RF class.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLF7G27L-135,118 | Ampleon USA ... | 0.0 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
BLF7G10L-250,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G10L-250,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G10LS-250,118 | Ampleon USA ... | 68.57 $ | 100 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-200,118 | Ampleon USA ... | 62.71 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-100,112 | Ampleon USA ... | 46.57 $ | 92 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,112 | Ampleon USA ... | 51.22 $ | 13 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-100,118 | Ampleon USA ... | 39.87 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,118 | Ampleon USA ... | 43.86 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-90P,118 | Ampleon USA ... | 45.65 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-90P,112 | Ampleon USA ... | 49.32 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G27LS-100,118 | Ampleon USA ... | 53.52 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-100,112 | Ampleon USA ... | 57.55 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,118 | Ampleon USA ... | 59.61 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,118 | Ampleon USA ... | 61.04 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,112 | Ampleon USA ... | 64.1 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,112 | Ampleon USA ... | 65.63 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-200,112 | Ampleon USA ... | 67.43 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-140,118 | Ampleon USA ... | 68.57 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-150P,118 | Ampleon USA ... | 73.3 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-140,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27L-135,112 | Ampleon USA ... | 73.72 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
BLF7G10LS-250,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G24LS-160P,118 | Ampleon USA ... | 74.94 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-160P,112 | Ampleon USA ... | 78.95 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,118 | Ampleon USA ... | 82.73 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,118 | Ampleon USA ... | 85.68 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,112 | Ampleon USA ... | 87.14 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,112 | Ampleon USA ... | 90.27 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-200,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-160,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-160,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-140P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G20LS-140P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G22L-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20L-90P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20L-90P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...