BLF7G24L-160P,112 Allicdata Electronics
Allicdata Part #:

BLF7G24L-160P,112-ND

Manufacturer Part#:

BLF7G24L-160P,112

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 18.5DB SOT539A
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 1.2A 2.3...
DataSheet: BLF7G24L-160P,112 datasheetBLF7G24L-160P,112 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 2.3GHz ~ 2.4GHz
Gain: 18.5dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 1.2A
Power - Output: 30W
Voltage - Rated: 65V
Package / Case: SOT539A
Supplier Device Package: SOT539A
Base Part Number: BLF7G24
Description

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The BLF7G24L-160P,112 Transistor is an advanced device that is used in the RF (Radio Frequency) world. It is a field effect transistor (FET) that works by transferring radio frequency signals within an electronic circuit. This particular model is designed to operate over a frequency range from 0.013 to 40GHz. It is also capable of withstanding high voltage levels. As such, it is suitable for use in communications and wireless applications.

The device is a low-noise narrow-band model, which means that it does not suffer from high levels of interference and can remain in operation over long periods of time with minimal interruption. It is also able to switch quickly between active and idle states. This makes it suitable for use in applications where resolution and precision are important.

The device is also capable of withstanding temperatures that range from -50 to +150 degrees Celsius. This makes it suitable for use in a broad range of applications and operating conditions, from residential use to industrial environments. This allows it to be used in a range of applications including microwave ovens, telecommunication systems, and automotive applications.

The working principle of the BLF7G24L-160P,112 Transistor is based on the ability of a voltage to create an electric field between two metal plates. This electric field is known as a ‘gate’ and when it is activated, a current is allowed to flow between the two metal plates. This current can then be used to control and manipulate the flow of electrons within an electronic device. This makes it possible to switch, amplify and control signals in a variety of ways.

In addition, the device is capable of operating at extremely high frequencies, which makes it suitable for use in applications such as cellular networks, Wi-Fi networks and other high-frequency transmission systems. The device is also capable of withstanding high levels of power and is therefore suitable for use in microwave ovens and radar systems.

The BLF7G24L-160P,112 Transistor is a state-of-the-art device that is suitable for use in a wide range of applications in the RF (Radio Frequency) world. It is a low-noise narrow-band model capable of withstanding temperatures ranging from -50 to +150 degrees Celsius and is designed to operate over a frequency range from 0.013 to 40GHz. This makes it suitable for use in a range of residential, commercial and industrial applications where precision and resolution are important. Furthermore, its ability to switch quickly between active and idle states, as well as its ability to withstand high voltages, makes it an ideal choice for use in a broad range of applications.

The specific data is subject to PDF, and the above content is for reference

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