Allicdata Part #: | BLF7G20LS-250P,118-ND |
Manufacturer Part#: |
BLF7G20LS-250P,118 |
Price: | $ 82.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 18DB SOT539B |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 28V 1.9A 1.8... |
DataSheet: | BLF7G20LS-250P,118 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 75.20030 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 1.81GHz ~ 1.88GHz |
Gain: | 18dB |
Voltage - Test: | 28V |
Current Rating: | 65A |
Noise Figure: | -- |
Current - Test: | 1.9A |
Power - Output: | 70W |
Voltage - Rated: | 65V |
Package / Case: | SOT539B |
Supplier Device Package: | SOT539B |
Base Part Number: | BLF7G20 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FETs, MOSFETs, and RF technology make up the basis of transistor techology. BLF7G20LS-250P,118 is an type of transistor that is designed to very specific applications fields. Its primary uses are in fields such as automotive, medical imaging, industrial automation, consumer radio frequency (RF) applications, and more.
In order for products to be effective in their intended uses, the BLF7G20LS-250P,118 must be kept to certain specifications and parameters. The peak current is 8.5 amp, the gate charge level is 62 nano-coulombs, the maximum voltage goes up to 250 volts, the thermal resistance is rated at 68 degrees Celsius, the voltage is 120 volts, and the resistance is .022 ohms. The breakdown voltage is rated at 200 volts, with a certain capacitance level at 500 pF.
While the BLF7G20LS-250P,118 is typically used in automotive, medical imaging, and industrial automation, it also has a wide variety of applications in consumer audio. This is due to the Transconductance level being a high 3.2mhos, which is higher than other similar-sized FETs, MOSFETs, and RF transistors. In addition, the power dissipation range is wide, allowing the BLF7G20LS-250P,118 to provide a high level of performance in various audio devices.
The BLF7G20LS-250P,118’s primary use is in RF applications, due to the high transconductor level. This allows the transistor to deliver superior performance in both transmit and receive applications. It is often found in products such as wireless phone handsets and Bluetooth headsets, as well as satellite, cellular, and other RF receives.
The BLF7G20LS-250P,118 works by operating in constant current, or current limiting operations. This means that the transistor is capable of delivering a steady current, at the specified voltage level, with a predetermined gate voltage applied, regardless of conditions in the environment. This allows for higher power efficiency, which is especially important in RF applications, as power levels become higher.
In addition to RF applications, the BLF7G20LS-250P,118 is also capable of powering a wide variety of devices such as medical, automotive, and industrial systems. Its wide range of transconductance makes it suitable for powering power converters, motor controllers, DC-DC converters, and other high power applications. Its peak current and power dissipation range make it capable of powering a variety of devices with high levels of efficiency.
The BLF7G20LS-250P,118 is capable of a wide range of operating temperatures, allowing it to be used in a variety of extreme temperature environments. Its breakdown voltage is rated at 200 volts, allowing it to withstand extremely overload conditions. This makes it suitable for use in industrial and military applications, where failure-proof designs are necessary.
Overall, the BLF7G20LS-250P,118 is a transcondutor that is suitable for a wide range of applications. Its range of capabilities make it suitable for use in medical, automotive, and industrial automation applications, as well as in consumer audio and RF applications. The combination of its peak current, gate charge level, thermal resistance, breakdown voltage, capacitance, and transconductance make it capable of delivering high performance in many environments.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF7G27L-135,118 | Ampleon USA ... | 0.0 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
BLF7G10L-250,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G10L-250,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G10LS-250,118 | Ampleon USA ... | 68.57 $ | 100 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-200,118 | Ampleon USA ... | 62.71 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-100,112 | Ampleon USA ... | 46.57 $ | 92 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,112 | Ampleon USA ... | 51.22 $ | 13 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-100,118 | Ampleon USA ... | 39.87 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,118 | Ampleon USA ... | 43.86 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-90P,118 | Ampleon USA ... | 45.65 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-90P,112 | Ampleon USA ... | 49.32 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G27LS-100,118 | Ampleon USA ... | 53.52 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-100,112 | Ampleon USA ... | 57.55 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,118 | Ampleon USA ... | 59.61 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,118 | Ampleon USA ... | 61.04 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,112 | Ampleon USA ... | 64.1 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,112 | Ampleon USA ... | 65.63 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-200,112 | Ampleon USA ... | 67.43 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-140,118 | Ampleon USA ... | 68.57 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-150P,118 | Ampleon USA ... | 73.3 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-140,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27L-135,112 | Ampleon USA ... | 73.72 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
BLF7G10LS-250,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G24LS-160P,118 | Ampleon USA ... | 74.94 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-160P,112 | Ampleon USA ... | 78.95 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,118 | Ampleon USA ... | 82.73 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,118 | Ampleon USA ... | 85.68 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,112 | Ampleon USA ... | 87.14 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,112 | Ampleon USA ... | 90.27 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-200,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-160,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-160,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-140P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G20LS-140P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G22L-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20L-90P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20L-90P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
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