BLF7G20LS-90P,118

BLF7G20LS-90P device is an advanced radio frequency (RF) MOSFET developed by Renesas Electronics. It is the first RF MOSFET with an 8-pin leadless surface-mount package, incorporating a robust shielding construction. The device can provide up to 90 W of total output power or up to 18 dB of linear power gain. BLF7G20LS-90P is ideal for high-efficiency applications in RF power amplifiers mainly operating in the 2 GHz range.

The BLF7G20LS-90P device is a normally-on laterally diffused MOSFET (LDMOS) transistor designed for use in high frequency applications, including amplifiers for base-station and portable radios, wideband amplifiers, digital communication systems, test and measurement instrumentation, and consumer electronics.

The device utilizes a lateral structure and multiple metallization lines to achieve optimal performance. It comes in a compact 8-pin leadless surface-mount package, which is suitable for automated assembly process. The device also features low thermal resistance and high breakdown voltage. This device is available in the SOT-403 package with the 0.5μm gate length and 12μm gate width.

The device works by allowing electrical current to flow when sufficient voltage is applied to the gate electrode. When the voltage applied is insufficient, the meterial may be considered to be blocking, so no current can flow. In application, the device can be configured as a switch, amplifier, or a combination of the two. In principle, the device consists of three regions at different potentials separated by two depletion regions, or areas free of charge carriers. These regions are referred to as the source, drain and gate regions.

As an amplifier, the device can be used in a variety of applications from low to high frequency signals. It can be used in antenna systems, satellite TV systems, communications equipment and medical equipment. Further, the gate region of the device is configured to allow more or less current flow from source to drain as a function of input voltage applied to the gate. This device can also work in combination with off-chip components, such as matching networks, bias circuits, and filters to provide optimized operation and gain.

In conclusion, the BLF7G20LS-90P device has been designed to provide high power output and linear power gain performance in the 2 GHz range and is ideal for high-efficiency applications such as RF power amplifiers and wideband amplifiers. The 8-pin leadless surface mount package offers high performance and is optimized for automated assembly process. The device employs a lateral structure and multiple metallization layers along with low thermal resistivity and high-breakdown voltage properties.