BLF7G21L-160P,118

BLF7G21L-160P,118 is an RF FET from NXP Semiconductors. The FET is a high-power, wide band L-class 15A GaN on Silicon Carbide (GaN-on-SiC) power transistor with excellent thermal and electrical characteristics.

It features a robust highly reliable FET structure, special heat spreader, and air-cooled package technology. The product offers very high efficiency, making it suitable for use in high efficiency, high power density amplifiers and transmitters operating in the frequencies ranging from 1.0 to 3.0 GHz.

BLF7G21L-160P,118 is a 135 W, very robust FET. The device is ideal for applications such both in and out of band operation, WLAN operation, and in transmit and receive applications. Due to its ability to handle high frequency, high power, and wide frequency bands, this device can be thought to be a very valuable asset in wireless communication applications.

When it comes to its working principle, the BLF7G21L-160P,118 uses a field effect transistor architecture. The FET comprises a source, drain, and gate electrodes, with a gate control current flowing through the gate-oxide layer. The gate control current allows a certain amount of current to flow between the source and drain electrodes, forming current in certain regions of the junction. This current is modulated by the voltage on the gate, allowing either an increase (in the case of an n-channel FET) or decrease (in the case of a p-channel FET) of current flow. The output current at the drain is determined by the source voltage, gate voltage, and the gate-oxide thickness.

The power rating of BLF7G21L-160P,118 is quite impressive. It can operate with a power output of up to 135 W at frequencies of up to 3.0 GHz. This device offers high threshold voltage, small gate capacitance, and low on-state resistance, making it an ideal choice for high power, wideband RF systems.

In conclusion, the BLF7G21L-160P,118 RF FET is an excellent device offering a wide range of applications. It offers outstanding performance, high power rating, robust architecture, and low on-state resistance, making it the perfect solution for powering high frequency and high power wireless communication systems.