Allicdata Part #: | BLF7G27L-135,112-ND |
Manufacturer Part#: |
BLF7G27L-135,112 |
Price: | $ 73.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | TRANSISTOR RF PWR LDMOS SOT502A |
More Detail: | RF Mosfet LDMOS 28V 1.3A 2.6GHz ~ 2.7GHz 16.5dB 25... |
DataSheet: | BLF7G27L-135,112 Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 67.02000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Last Time Buy |
Transistor Type: | LDMOS |
Frequency: | 2.6GHz ~ 2.7GHz |
Gain: | 16.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 25W |
Package / Case: | SOT-502A |
Supplier Device Package: | LDMOST |
Base Part Number: | BLF7G27 |
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The BLF7G27L-135,112 is a planar monolithic double-balanced mixer. It is a type of transistor, more specifically classified as a FET (Field Effect Transistor) and a MOSFET (Metal-oxide Semiconductor Field Effect Transistor). Being a transistor in the RF (radio frequency) range, it operates at high frequencies. With this device, direct conversion of signals can be achieved between any two frequencies. It is equipped with three ports: the input port, the output port, and the local oscillator port.
The purpose of the BLF7G27L-135,112 is to provide a simple, low-cost solution for signal processing with very little signal attenuation. By using double-balanced mixers, signal conversion and signal interference are avoided while also maintaining low noise levels. Signal conversion can be used to convert signal frequency, voltage, and impedance levels, among other signal characteristics.
The BLF7G27L-135,112 is easy to use due to its single-ended input and output structure. This allows it to be able to handle signals with a wide dynamic range. The device\'s stability and flat frequency response is insured by use of temperature compensation circuits. Additionally, the BLF7G27L-135,112 also features high and low RF isolation, which allows it to be used for applications such as IF (intermediate frequency) filtering, signal modulation and demodulation, and up-and-down converting.
In order to determine the working principle of the BLF7G27L-135,112, the task will be to break it down into its components and their roles. At the basic level, the device is composed of a transistor section and a passive section. Firstly, the transistor section makes up the active device, which consists of four transistors connected in an arrangement known as the common base circuit. This allows a high amplification of the input signal and results in a low noise output. These transistors provide high linearity, allowing the mixer to accurately match the modulation levels of the signal inputs.
The second section, the passive section, is composed of the resistors and capacitors of the mixer. This is responsible for the isolation between the input and output ports. The resistors and capacitors work to reduce the admittance in order to allow for better control of the voltage and current signals, leading to a lower output noise and improved signal-to-noise ratio.
Finally, the active section and the passive section of the mixer are coupled together by means of an inductor coil. This inductor coil makes sure that the voltage signals reaching the output port remain in phase and symmetrical, thus ensuring that a high-level quality output signal is produced. In combination with the thermal compensation circuits, this allows for stability even over a wide temperature range.
In conclusion, BLF7G27L-135,112 is a type of transistor specifically classified as a FET and a MOSFET. It operates in the radio frequency range and is used in a variety of applications, including signal modulation and demodulation, and up-and-down converting. Its working principle is based on a combination of the active transistor section and the passive section, coupled together by an inductor coil, allowing for excellent signal conversion and very low signal attenuation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BLF7G10LS-250,118 | Ampleon USA ... | 68.57 $ | 100 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-200,118 | Ampleon USA ... | 62.71 $ | 100 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-100,112 | Ampleon USA ... | 46.57 $ | 92 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,112 | Ampleon USA ... | 51.22 $ | 13 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-100,118 | Ampleon USA ... | 39.87 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G24LS-140,118 | Ampleon USA ... | 43.86 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-90P,118 | Ampleon USA ... | 45.65 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20LS-90P,112 | Ampleon USA ... | 49.32 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G27LS-100,118 | Ampleon USA ... | 53.52 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-100,112 | Ampleon USA ... | 57.55 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,118 | Ampleon USA ... | 59.61 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,118 | Ampleon USA ... | 61.04 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-200,112 | Ampleon USA ... | 64.1 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G21LS-160P,112 | Ampleon USA ... | 65.63 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-200,112 | Ampleon USA ... | 67.43 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G27LS-140,118 | Ampleon USA ... | 68.57 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-150P,118 | Ampleon USA ... | 73.3 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27LS-140,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLF7G27L-135,112 | Ampleon USA ... | 73.72 $ | 1000 | TRANSISTOR RF PWR LDMOS S... |
BLF7G10LS-250,112 | Ampleon USA ... | 73.72 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G24LS-160P,118 | Ampleon USA ... | 74.94 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G24LS-160P,112 | Ampleon USA ... | 78.95 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,118 | Ampleon USA ... | 82.73 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,118 | Ampleon USA ... | 85.68 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20LS-250P,112 | Ampleon USA ... | 87.14 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-250P,112 | Ampleon USA ... | 90.27 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-200,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22LS-160,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G22LS-160,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18DB SOT... |
BLF7G20LS-140P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G20LS-140P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 17DB SOT... |
BLF7G22L-130,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G22L-130,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 18.5DB S... |
BLF7G20L-90P,112 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
BLF7G20L-90P,118 | Ampleon USA ... | 0.0 $ | 1000 | RF FET LDMOS 65V 19.5DB S... |
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