BSZ070N08LS5ATMA1

Series:	*
Packaging:	Tape & Reel (TR)
Part Status:	Active
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TSDSON-8-FL
Package / Case:	8-PowerTDFN

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BSZ070N08LS5ATMA1 is a member of the E Series product family of SuperJunction (SJ) MOSFETs. It is a highly advanced power device designed for use in various switch-mode applications, such as motor drives, industrial automation, robotics and renewable energy applications. This power device is made with a vertical structure where its three terminals (drain, source and gate) are arranged horizontally across the surface of the chip. The chip also has two or more floating negative gates (also referred to as counters) which provide improved switching capability compared to standard vertical MOSFETS.The BSZ070N08LS5ATMA1 is designed to be used as a switch in high-current, high-frequency, low-side switching applications. Due to its low on-state resistance, which is usually between 0.05 and 0.8 Ohms, this device can achieve power conversion efficiency of up to 90% in applications such as high-frequency inverters, motor drives and server power supplies. The device can also be used in low-side buck converters, DC/DC converters, high-side PWM rectifiers and buck-boost converters. Its low-side structure makes it well-suited for applications where a low-side MOSFET can be used, such as in hot-swap applications.The power device\'s output current is regulated by the gate voltage and maximized by the drain-source voltage. The gate-source voltage is limited to the VGS th, or gate-source voltage threshold. When the gate-source voltage is outside the VGS th range, the MOSFET is unable to provide its full power capability, thus limiting its output current. Most VGS th are set at 5-10V. When the gate voltage is lower than the gate-source voltage threshold or the drain-source voltage is higher than the on-state voltage, the BSZ070N08LS5ATMA1 will operate in its linear region. In linear mode, the device behaves like a resistor and can only pass constant current. When the gate-source voltage is higher than the VGS th and the drain-source voltage is equal to or less than the on-state voltage, the device will operate in its saturated region, allowing it to pass significantly more current.The P-channel MOSFET BSZ070N08LS5ATMA1 also offers thermal performance advantages over its N-channel counterparts. The thermal dissipation of this device is only 0.06°C/W. This low thermal resistance makes the device ideal for applications that require a wide temperature range and fast heat dissipation. The on-resistance of the P-channel MOSFET BSZ070N08LS5ATMA1 is also relatively low, typically between 1-20mΩ. The channel has a wide VGS(th) range (4.0 to 8.0 V) which allows it to operate at low and high gate-source voltages. The device also features a low gate-drain capacitance and a high frequency Fourier series which make the device suitable for high-frequency switching applications. In conclusion, the BSZ070N08LS5ATMA1 is a versatile and reliable P-channel MOSFET designed for use in low-side switching applications. Its low on-state resistance, wide VGS(th) range and thermal performance make it an ideal choice for applications that require fast switching, high efficiency and improved thermal performance.

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