BSZ097N10NS5ATMA1 Allicdata Electronics

BSZ097N10NS5ATMA1 Discrete Semiconductor Products

Allicdata Part #:

BSZ097N10NS5ATMA1TR-ND

Manufacturer Part#:

BSZ097N10NS5ATMA1

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 40A TSDSON-8
More Detail: N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 69W (T...
DataSheet: BSZ097N10NS5ATMA1 datasheetBSZ097N10NS5ATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.48092
Stock 1000Can Ship Immediately
$ 0.53
Specifications
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BSZ097N10NS5ATMA1 is a kind of field effect transistor which belongs to single type MOSFET. Compared with the traditional transistor, this kind of transistor has more powerful and reliable features, so it can be widely used in various industries and applications. In this article, the application field and working principle of BSZ097N10NS5ATMA1 will be discussed.

The BSZ097N10NS5ATMA1 is a power MOSFET. It has N-channel MOSFET, die for water cooling, great avalanche capability, wide range of operating temperatures and high maximum operating temperature. Its specific parameters are rated drain-to-source voltage VDSS: 10V; Continuous drain current ID: 25A; Drain-source ON resistance RDS(on): 0.0097 Ω; maximum operating temperature Tmax: 175℃. Because of high thermal resistance and waterproof design, it can be operated under high temperature and harsh environment. With these features, BSZ097N10NS5ATMA1 is perfectly suitable for those applications which require high power and high efficiency.

In terms of application, BSZ097N10NS5ATMA1 usually used in motor control, intelligent lighting, solar energy inverter, data communication center, industrial automation, server, automotive electronics and so on. Meanwhile, as the power transistor in the switching application, BSZ097N10NS5ATMA1 can bring great price/performance ratio and good protection performance..

The working principle of BSZ097N10NS5ATMA1 is relatively simple. It is a kind of voltage-controlled transistor. In the OFF state, the source-drain paths of the MOSFET are closed, just like an opened switch. When the voltage at the gate is large enough, the MOSFET turns to the ON state, which means the source-drain link is now opened and current can pass through. This can be achieved by the voltage control effect of the MOSFET.

In conclusion, the BSZ097N10NS5ATMA1 is a typical power transistor, which is suitable for motor control, intelligent lighting and other high-power applications. Its application field is extensive, and its working principle is relatively simple. With its special features, this kind of transistor can bring good protection performance and stable operation.

The specific data is subject to PDF, and the above content is for reference

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