BSZ050N03MSGATMA1 Discrete Semiconductor Products

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BSZ050N03MSGATMA1 is a single-channel N-type metal oxide semiconductor field-effect transistor (MOSFET) that provides on-state drain current. It is suitable for use in high frequency, low voltage applications such as DC-DC converters, LED lighting and LCD backlighting. This MOSFET also offers excellent protection features such as over-voltage protection (OVP), over-current protection (OCP), and over-temperature protection (OTP).

BSZ050N03MSGATMA1 is constructed from a high purity silicon substrate and is coated with a dielectric layer between the gate and the drain and source. This layer, known as a gate oxide, acts as an insulator to prevent current flow between the gate and drain and source electrodes.

BSZ050N03MSGATMA1 operates as an enhancement-mode device and has an N-type channel. When a voltage is applied to the gate, electrons are attracted to the gate-oxide layer and this forms a conductive channel between drain and source. The result is an on-state current flow between drain and source. As the voltage applied to the gate increases, the size of the conductive channel increases and more electrons are able to flow through it. The greater the current flow, the higher the on-state drain current. The threshold voltage (VGS) of the MOSFET is the gate voltage required to turn the device on.

One of the main advantages of BSZ050N03MSGATMA1 is its low on-resistance. This is the resistance between the drain and the source when the device is fully switched on. The lower the on-resistance of the device, the less energy is dissipated as heat and the higher the efficiency. Additionally, the low on-resistance enables it to be used in applications that require high switching frequencies and low voltage drop.

BSZ050N03MSGATMA1 is highly reliable, and is available in the TO-277 package. This package offers small size and low profile and is therefore suitable for space-constrained applications. The MOSFET also features a wide range of features that ensure safe operation and protect the load in the event of an overload or fault. Additionally, the MOSFET comes with an operating temperature range of -55°C to 170°C.

In conclusion, BSZ050N03MSGATMA1 is a high efficiency single-channel N-type MOSFET suitable for high frequency, low voltage DC-DC converter and LED lighting applications. It is constructed from high purity silicon substrate and coated with a dielectric layer between the gate and the drain and source. The device operates as an enhancement-mode device and has a low on-resistance and wide operating temperature range. Additionally, it has various protection features that ensure safe operation and protection of the load in the event of an overload or fault.

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