
Allicdata Part #: | BSZ0901NSIATMA1TR-ND |
Manufacturer Part#: |
BSZ0901NSIATMA1 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 40A TSDSON |
More Detail: | N-Channel 30V 25A (Ta), 40A (Tc) 2.1W (Ta), 69W (T... |
DataSheet: | ![]() |
Quantity: | 5000 |
1 +: | $ 0.39000 |
10 +: | $ 0.37830 |
100 +: | $ 0.37050 |
1000 +: | $ 0.36270 |
10000 +: | $ 0.35100 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8-FL |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 69W (Tc) |
FET Feature: | Schottky Diode (Body) |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSZ0901NSIATMA1 is a general-purpose N-channel enhancement mode MOSFET designed for use in various applications. This device, typically used in a single-device form, consists of an n-type source, an n-type drain, and a gate region. When an electrical signal is applied to the gate region, it create an electric field and cause electron movement from the source to the drain of the device.
The BSZ0901NSIATMA1 is particularly well suited for use in applications where low noise is important or in applications where the MOSFET must switch the load rapidly. It has low gate resistance and on-resistance, making it ideal for use in pulsed switching applications. This device also has very low reverse body diode leakage currents and is capable of operating at higher frequencies than many other similar MOSFETs.
The BSZ0901NSIATMA1 provides low gate capacitance and low power consumption when operated in the linear region. It is also capable of high-current handling, making it suitable for applications that require a large amount of power. Additionally, the BSZ0901NSIATMA1 can be used in both dual and single device configurations for increased flexibility in the design and implementation of the system.
The working principle of the BSZ0901NSIATMA1 is based on the transistor’s effect. Transistors function as a type of semiconductor, acting as a switch. When an external signal is applied to the transistor’s gate, electrons begin to flow from the source to the drain. This action creates an "on" state, and if the signal is removed, the device is returned to an "off" state.
The BSZ0901NSIATMA1 offers many features and benefits that make it a popular choice among engineers. It is designed to be low-noise and low-power, has a fast switching time, is highly reliable, and is versatile enough to be used in a wide range of applications. Additionally, the device is offered in both single and dual configurations, which allows for greater design flexibility and the ability to tailor the device’s specifications to meet the needs of any application.
The BSZ0901NSIATMA1 is a great choice for applications where low noise, low power consumption, and fast switching are important. The device’s high reliability, versatility, and low-cost make it a popular option for many engineers. With its varied applications, ease of use, and wide availability, it is easy to see why the BSZ0901NSIATMA1 is such a popular choice among engineers around the world.
The specific data is subject to PDF, and the above content is for reference
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