BSZ040N04LSGATMA1 Allicdata Electronics
Allicdata Part #:

BSZ040N04LSGATMA1TR-ND

Manufacturer Part#:

BSZ040N04LSGATMA1

Price: $ 0.34
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 40A TSDSON-8
More Detail: N-Channel 40V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (T...
DataSheet: BSZ040N04LSGATMA1 datasheetBSZ040N04LSGATMA1 Datasheet/PDF
Quantity: 20000
1 +: $ 0.34000
10 +: $ 0.32980
100 +: $ 0.32300
1000 +: $ 0.31620
10000 +: $ 0.30600
Stock 20000Can Ship Immediately
$ 0.34
Specifications
Vgs(th) (Max) @ Id: 2V @ 36µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSZ040N04LSGATMA1 is a type of single MOSFET, which is a type of field-effect transistor (FET). Generally speaking, FETs are devices which involve the use of an electric field in order to control the flow of current between two terminals. They are typically used to amplify, switch, and various other signal processing functions. MOSFETs are one type of FET that stands for metal-oxide-semiconductor field-effect transistor. The particular suffix language of the BSZ040N04LSGATMA1 refers to its horsepower rating, which is 40 Watts. It also signifies that it is a logic level MOSFET, meaning it has a gate threshold voltage of low 4 V for its interpretation of logic high and 15V for its interpretation of logic low.

The BSZ040N04LSGATMA1 is important because of its applications in low-voltage and high-current applications. It is designed to handle high power dissipation and to operate efficiently in both linear and switching power conversion. It is a key component to convert AC mains power, to DC power for industrial equipment and consumer applications. The BSZ040N04LSGATMA1 is a popular choice for switching power converter and DC/DC converters due to its fast turn-on speed and low on-resistance.

The BSZ040N04LSGATMA1 is a single voltage N-channel MOSFET, which means it is composed of one active layer with a single gate oxide, surrounded by N-doped layers. It has a drain-source breakdown voltage of 40V, with a maximum drain current of 0.04A, and a total gate charge of 8.5 nC. The device works by using the voltage applied at the gate to control the current flow from the source to the drain. As such, this device is, typically, used in high-frequency circuits such as in DC/DC converters for buck, boost, and flyback power regulation.

The drain-source breakdown field of the BSZ040N04LSGATMA1 is large enough for it to be used in high voltage applications. Its on-resistance is also low enough that it can be used as a switch in multiple circuits and power supplies. This device is also designed to operate efficiently in low- and moderate-voltage and high-current switching applications with a very low power loss—which makes it ideal for designing power conversion and signal conditioning applications. Also, the device is rated to operate at a temperature up to +150 degrees Celsius.

The BSZ040N04LSGATMA1 is a valuable device for many applications in electronic and power conversion design. It provides an efficient, low-power solution for a wide range of voltage and current applications. The device allows precise gate control and a predictable output current, which helps reduce design complexity and component count. Additionally, the device is available in a variety of packages, allowing it to fit into different applications.

The specific data is subject to PDF, and the above content is for reference

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