
Allicdata Part #: | BSZ0703LSATMA1-ND |
Manufacturer Part#: |
BSZ0703LSATMA1 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 8TDSON |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.26980 |
Series: | * |
Part Status: | Active |
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The BSZ0703LSATMA1 is a N-channel enhancement mode field effect transistor, which is usually subdivided further into metal-oxide-semiconductor field-effect transistors (MOSFETs). It can be used as a linear (resistive) and switching (SNOS, Source drain region turn off) type transistor, which offers power switch, higher speed switching and low standby power consumption. It has a built in gate protection against static discharge (ESD). The BSZ0703LSATMA1 can be operated in a voltage range up to 80V.
MOSFETs are used in a wide range of applications, from digital switching to the control of electrical motors, due to their high resistance, high frequency and low power consumption characteristics. In addition, the BSZ0703LSATMA1 is suitable for use in a variety of applications including audio amplifiers, motor and power control, switching power supplies and 60Hz AC motor speed control. It is also suitable for high speed logic circuits and DC-DC converters.
The working principle of the BSZ0703LSATMA1 is based on an electrical field between the gate and source terminals. The application of a voltage between the gate and source terminals overcomes the resistance of the channel and allows a current to flow between the drain and the source terminals. This current (ID) is controlled by the applied gate-source voltage (VGS). Thus, the BSZ0703LSATMA1 can be used as a switch, to control the operation of other components.
The BSZ0703LSATMA1 has a wide input range, providing a flexible and adjustable solution. The unit is designed as a 8-pin Surface-Mount Package (SMD), making it suitable for automated assembly and short mounting times. It has a maximum drain-source breakdown voltage of 80V (BVDSS), and its drain current is limited to 7A (ID). The on-resistance (RDS) of the BSZ0703LSATMA1 is 5.2mOhms, with a threshold voltage (VGS) of 4V.
In summary, the BSZ0703LSATMA1 is an N-channel MOSFET, which is well-suited for use in applications requiring higher switching speeds, lower power consumption, and high resistance. It has a wide input range, allowing it to be used as a switch for other components, and its SMD package makes it convenient for automated assembly. Finally, its maximum drain-source breakdown voltage of 80V, drain current of 7A, and on-resistance of 5.2mOhms ensure excellent performance.
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Part Number | Manufacturer | Price | Quantity | Description |
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BSZ065N06LS5ATMA1 | Infineon Tec... | 0.35 $ | 1000 | MV POWER MOSSurface Mount... |
BSZ0904NSIATMA1 | Infineon Tec... | 0.26 $ | 1000 | MOSFET N-CH 30V 40A TSDSO... |
BSZ068N06NSATMA1 | Infineon Tec... | 0.3 $ | 1000 | MOSFET N-CH 60V 40A 8TSDS... |
BSZ0703LSATMA1 | Infineon Tec... | 0.29 $ | 1000 | MOSFET N-CH 8TDSON |
BSZ035N03LSGATMA1 | Infineon Tec... | 0.4 $ | 1000 | MOSFET N-CH 30V 40A TSDSO... |
BSZ096N10LS5ATMA1 | Infineon Tec... | 0.53 $ | 1000 | MV POWER MOSSurface Mount... |
BSZ088N03MSGATMA1 | Infineon Tec... | 0.23 $ | 5000 | MOSFET N-CH 30V 40A TSDSO... |
BSZ018NE2LSIATMA1 | Infineon Tec... | 0.54 $ | 10000 | MOSFET N-CH 25V 22A TSDSO... |
BSZ086P03NS3EGATMA1 | Infineon Tec... | 0.25 $ | 1000 | MOSFET P-CH 30V 40A TSDSO... |
BSZ0902NSIATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 21A TSDSO... |
BSZ088N03LSGATMA1 | Infineon Tec... | 0.22 $ | 5000 | MOSFET N-CH 30V 40A TSDSO... |
BSZ086P03NS3GATMA1 | Infineon Tec... | -- | 15000 | MOSFET P-CH 30V 40A TSDSO... |
BSZ033NE2LS5ATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 25V 18A 8SONN... |
BSZ028N04LSATMA1 | Infineon Tec... | 0.39 $ | 1000 | MOSFET N-CH 40V 21A 8TSDS... |
BSZ099N06LS5ATMA1 | Infineon Tec... | -- | 7 | MV POWER MOSSurface Mount... |
BSZ025N04LSATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 22A TSDSO... |
BSZ0901NSIATMA1 | Infineon Tec... | -- | 5000 | MOSFET N-CH 30V 40A TSDSO... |
BSZ0902NSATMA1 | Infineon Tec... | 0.28 $ | 5000 | MOSFET N-CH 30V 40A TSDSO... |
BSZ013NE2LS5IATMA1 | Infineon Tec... | 0.56 $ | 1000 | MOSFET N-CH 25V 32A 8SONN... |
BSZ017NE2LS5IATMA1 | Infineon Tec... | 0.44 $ | 1000 | MOSFET N-CH 25V 27A 8SONN... |
BSZ097N10NS5ATMA1 | Infineon Tec... | 0.53 $ | 1000 | MOSFET N-CH 100V 40A TSDS... |
BSZ0994NSATMA1 | Infineon Tec... | 0.22 $ | 1000 | MOSFET N-CHANNEL 30V 13A ... |
BSZ050N03MSGATMA1 | Infineon Tec... | 0.26 $ | 1000 | MOSFET N-CH 30V 40A TSDSO... |
BSZ031NE2LS5ATMA1 | Infineon Tec... | 0.34 $ | 1000 | MOSFET N-CH 25V 19A 8SONN... |
BSZ067N06LS3GATMA1 | Infineon Tec... | -- | 20000 | MOSFET N-CH 60V 20A TSDSO... |
BSZ042N06NSATMA1 | Infineon Tec... | 0.53 $ | 1000 | MOSFET N-CH 60V 19A 8TSDS... |
BSZ0909NSATMA1 | Infineon Tec... | 0.16 $ | 1000 | MOSFET N-CH 34V 9A 8TSDSO... |
BSZ084N08NS5ATMA1 | Infineon Tec... | 0.41 $ | 1000 | MOSFET N-CH 80V 40A 8TSDS... |
BSZ0503NSIATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 20A 8SONN... |
BSZ0909NDXTMA1 | Infineon Tec... | -- | 5000 | MOSFET 2 N-CH 30V 20A WIS... |
BSZ040N06LS5ATMA1 | Infineon Tec... | -- | 4 | MV POWER MOSSurface Mount... |
BSZ019N03LSATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 22A TSDSO... |
BSZ0901NSATMA1 | Infineon Tec... | -- | 5000 | MOSFET N-CH 30V S308N-Cha... |
BSZ097N04LSGATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 40V 40A TSDSO... |
BSZ040N04LSGATMA1 | Infineon Tec... | -- | 20000 | MOSFET N-CH 40V 40A TSDSO... |
BSZ023N04LSATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 40V 22A TSDSO... |
BSZ0502NSIATMA1 | Infineon Tec... | 0.39 $ | 1000 | MOSFET N-CH 30V 22A 8SONN... |
BSZ058N03LSGATMA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 40A TSDSO... |
BSZ0589NSATMA1 | Infineon Tec... | 0.27 $ | 1000 | MOSFET N-CHANNEL 30V 17A ... |
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