BSZ0703LSATMA1 Allicdata Electronics
Allicdata Part #:

BSZ0703LSATMA1-ND

Manufacturer Part#:

BSZ0703LSATMA1

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 8TDSON
More Detail:
DataSheet: BSZ0703LSATMA1 datasheetBSZ0703LSATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.26980
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: *
Part Status: Active
Description

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The BSZ0703LSATMA1 is a N-channel enhancement mode field effect transistor, which is usually subdivided further into metal-oxide-semiconductor field-effect transistors (MOSFETs). It can be used as a linear (resistive) and switching (SNOS, Source drain region turn off) type transistor, which offers power switch, higher speed switching and low standby power consumption. It has a built in gate protection against static discharge (ESD). The BSZ0703LSATMA1 can be operated in a voltage range up to 80V.

MOSFETs are used in a wide range of applications, from digital switching to the control of electrical motors, due to their high resistance, high frequency and low power consumption characteristics. In addition, the BSZ0703LSATMA1 is suitable for use in a variety of applications including audio amplifiers, motor and power control, switching power supplies and 60Hz AC motor speed control. It is also suitable for high speed logic circuits and DC-DC converters.

The working principle of the BSZ0703LSATMA1 is based on an electrical field between the gate and source terminals. The application of a voltage between the gate and source terminals overcomes the resistance of the channel and allows a current to flow between the drain and the source terminals. This current (ID) is controlled by the applied gate-source voltage (VGS). Thus, the BSZ0703LSATMA1 can be used as a switch, to control the operation of other components.

The BSZ0703LSATMA1 has a wide input range, providing a flexible and adjustable solution. The unit is designed as a 8-pin Surface-Mount Package (SMD), making it suitable for automated assembly and short mounting times. It has a maximum drain-source breakdown voltage of 80V (BVDSS), and its drain current is limited to 7A (ID). The on-resistance (RDS) of the BSZ0703LSATMA1 is 5.2mOhms, with a threshold voltage (VGS) of 4V.

In summary, the BSZ0703LSATMA1 is an N-channel MOSFET, which is well-suited for use in applications requiring higher switching speeds, lower power consumption, and high resistance. It has a wide input range, allowing it to be used as a switch for other components, and its SMD package makes it convenient for automated assembly. Finally, its maximum drain-source breakdown voltage of 80V, drain current of 7A, and on-resistance of 5.2mOhms ensure excellent performance.

The specific data is subject to PDF, and the above content is for reference

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