BSZ0500NSIATMA1 Allicdata Electronics
Allicdata Part #:

BSZ0500NSIATMA1-ND

Manufacturer Part#:

BSZ0500NSIATMA1

Price: $ 0.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 30A 8SON
More Detail: N-Channel 30V 30A (Ta), 40A (Tc) 2.1W (Ta), 69W (T...
DataSheet: BSZ0500NSIATMA1 datasheetBSZ0500NSIATMA1 Datasheet/PDF
Quantity: 1000
5000 +: $ 0.55635
Stock 1000Can Ship Immediately
$ 0.62
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8-FL
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BSZ0500NSIATMA1 is a metal-oxide-semiconductor field-effect transistor (MOSFET) engineered to improve current transfer efficiency and reduce losses in a variety of electronic equipment. It is a n-type enhancement-mode MOSFET, meaning that it can be used as a switch, amplifier, or resistor to control electrical currents. The BSZ0500NSIATMA1 has many features that make it suitable for a wide range of applications, including its low on-state resistance and its ability to quickly switch on and off.

The BSZ0500NSIATMA1 is a single-gate MOSFET, meaning it contains only one gate. This gate is used to control the flow of electrons between the source and drain of the transistor. The gate of a MOSFET is typically connected to a voltage source that is either positive or negative. In the case of the BSZ0500NSIATMA1, the gate voltage affects the voltage between the source and drain, allowing the user to control the current between them.

The BSZ0500NSIATMA1 is a highly efficient device for controlling current in a variety of applications. It is commonly used in power supplies, switching power converters, and amplifier circuits. It is well-suited for applications that require low on-state resistance, with the ability to quickly switch on and off. This makes it a perfect choice for applications where low power consumption and high current performance are required, such as in battery-operated devices.

The BSZ0500NSIATMA1 MOSFET is also suitable for use in logic circuits and digital circuits. Because of its low resistance and fast switching capability, it can be quickly pulsed on and off to represent the logical circuits more accurately than traditional transistors. This makes it ideal for high-speed digital circuits.

In conclusion, the BSZ0500NSIATMA1 is an ideal device for controlling current in a variety of applications. Its features, such as its low on-state resistance and fast switching rate, make it highly efficient and suitable for a wide range of electronic applications. It is also applicable to low-power and digital circuits, due to its ability to accurately represent logical circuits at high speed.

The specific data is subject to PDF, and the above content is for reference

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