Allicdata Part #: | BSZ034N04LSATMA1TR-ND |
Manufacturer Part#: |
BSZ034N04LSATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 19A 8TSDSON |
More Detail: | N-Channel 40V 19A (Ta), 40A (Tc) 2.1W (Ta), 52W (T... |
DataSheet: | BSZ034N04LSATMA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8-FL |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | Automotive, AEC-Q101, OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.The BSZ034N04LSATMA1 transistor is a type of field-effect transistor, most commonly used in electronic circuits. FETs, or Field-Effect Transistors, are used as switches, amplifiers, and voltage regulators in modern electronics. The BSZ034N04LSATMA1 is a single N-channel MOSFET, meaning it has one N-type source, one N-type drain, and one N-type gate terminal. It is designed for applications in the automotive and industrial sectors that require high-speed switching, power conversion and amplification.
In order to understand how the BSZ034N04LSATMA1 works in modern electronics, it is important to understand the basic working principle of a transistor. The main function of a transistor is to maximize the flow of current between its source and drain terminals in order to amplify input signals. This is achieved by connecting the gate terminal to the source terminal, thus creating an electrical field which controls the flow of current. By applying an external voltage to the gate terminal, the transistor can be used as an amplifier or an electronic switch.
The BSZ034N04LSATMA1 is an enhancement-mode transistor that has an exceptionally low on-resistance and a high-current carry capability. This makes it ideal for high-speed switching applications and power conversion. It is also highly reliable and has a low gate threshold voltage of 2.5 V. Its maximum junction temperature, as high as 150°C, also makes it suitable for applications in harsh environments and high-temperature conditions. In automotive and industrial applications, the BSZ034N04LSATMA1 is often used for power conversion and motor control.
The BSZ034N04LSATMA1 is one of the most widely used single N-channel MOSFETs. It has a wide range of applications, from low-power switching to high-current load applications. The device’s low on-resistance and high-current capabilities make it an ideal choice for automotive and industrial applications in harsh conditions. The BSZ034N04LSATMA1 is also an ideal choice for high-speed switching applications and power conversion, as its low gate threshold voltage and high junction temperature allow for efficient operation.
The specific data is subject to PDF, and the above content is for reference
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