Allicdata Part #: | BSZ058N03LSGATMA1TR-ND |
Manufacturer Part#: |
BSZ058N03LSGATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 40A TSDSON-8 |
More Detail: | N-Channel 30V 15A (Ta), 40A (Tc) 2.1W (Ta), 45W (T... |
DataSheet: | BSZ058N03LSGATMA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSZ058N03LSGATMA1 is a three-terminal MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that can operate on as low as 3V and has a maximum power dissipation of 10W. It is also one of the smallest MOSFETs available, making it an ideal choice for use in a number of applications.
Applications of BSZ058N03LSGATMA1
BSZ058N03LSGATMA1 is commonly used for a variety of purposes, including:
- Switching: The BSZ058N03LSGATMA1 can be used as a switch in a variety of electrical and electronic circuits. For example, its fast switching times make it suitable for use in high-speed circuit applications.
- Signal Amplification: The BSZ058N03LSGATMA1 exhibits very low capacitance, making it a great choice for signal amplification. The transistor is also quite suitable for use in precision audio, video and digital circuits.
- Power Management: The BSZ058N03LSGATMA1 is also used in several power management applications due to its low on-state resistance. It can be used for battery charging and power dissipation in low-power applications.
- Level Shifting: This MOSFET can also be used to level-shift a signal from one voltage domain to another, which is useful for interfacing components from different voltage domains.
Working Principle of BSZ058N03LSGATMA1
BSZ058N03LSGATMA1 is a three-terminal MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It works on the principle of gate voltage controlling the amount of current flowing through the device.When a positive voltage is applied to the gate of the MOSFET, the gate-source voltage increases, resulting in the formation of a depletion region at the drain end of the device. This reduces the cross sectional area through which current can flow, thereby reducing overall current flow. When a negative voltage is applied to the gate, the gate-source voltage decreases, causing the depletion region to vanish and allowing current to flow freely through the device.By varying the amount of gate voltage, the amount of current flowing through the MOSFET can be precisely regulated. This makes the BSZ058N03LSGATMA1 an excellent choice for a wide range of applications, such as switching, signal amplification, power management and level shifting.
Conclusion
BSZ058N03LSGATMA1 is a versatile three-terminal MOSFET which can be used in a variety of applications, including switching, signal amplification, power management and level shifting. It is characterized by its small package size, low gate voltage, low on-state resistance and fast switching times. The BSZ058N03LSGATMA1 is an excellent choice for a number of applications, making it a popular and popular choice among engineers and makers alike.
The specific data is subject to PDF, and the above content is for reference
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