BSZ065N03LSATMA1

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BSZ065N03LSATMA1 is a N-channel enhancement-mode lateral MOSFET device manufactured by ON Semiconductor, which is known for its excellent characteristics and performance in electronic applications. This component has been designed to help reduce system cost and improving system performance, as well as providing superior energy efficiency and superior reliability. The device is also suitable for high-frequency switching, pulse-width modulation (PWM), and driving applications, as well as offering low gate, drain, and source capacitance.

Application Fields

The BSZ065N03LSATMA1 is an N-channel enhancement-mode lateral MOSFET device; this means it can be used for a variety of digital, linear, and power management applications. Typical applications include power switches, motor control, switch and amplifier circuits, and switching regulators.

The device incorporates an integrated FET (field-effect transistor) gate with an enhanced gate-source voltage rating, and is capable of withstanding gate-drain voltages up to 100V. This makes the device suitable for use in a wide variety of operating environments, ranging from consumer electronics to industrial and automotive applications.

In addition, the BSZ065N03LSATMA1 is also suitable for applications which require a low gate charge and low drain-source on resistance, such as Class-D amplifiers, DC-DC converters, and power converters.

Working Principle

The BSZ065N03LSATMA1 is an N-channel enhancement-mode lateral MOSFET device. This means that it consists of a MOSFET (metal-oxide semiconductor field-effect transistor) gate, drain, and source. This MOSFET gate is energised when a voltage differential is applied between its gate and source, allowing electricity to flow from the drain to the source. The BSZ065N03LSATMA1 is a voltage-controlled device, meaning that the input voltage will determine the amount of current that can pass through the device.

Unlike other types of transistors, the MOSFET’s gate is insulated from the source and drain, meaning that the MOSFET can be used as an efficient switch, able to amplify or modulate the input signal.

The BSZ065N03LSATMA1 is able to deliver high-speed switching performance, with a switching speed of up to 2.2GHz, allowing for high-frequency switching applications. The device is also capable of withstanding high gate-drain voltages of up to 100V, making it suitable for various usage scenarios in various operating environments.

The device also features low gate, drain, and source capacitive parasitics, which ensures that it operates with minimal power consumption, resulting in an improved efficiency of the application.

In addition, the BSZ065N03LSATMA1 is also suitable for use in high-temperature applications, with a maximum rated power dissipation of 170 watts. This ensures that the device is able to perform reliably and efficiently in a wide range of operating environments.

Conclusion

The BSZ065N03LSATMA1 is a N-channel enhancement-mode lateral MOSFET device manufactured by ON Semiconductor. This component has been designed to reduce system cost and improve system performance, and offers low gate, drain, and source capacitance. The device is suitable for use in a variety of digital, linear, and power management applications, including power switches, motor control, switch and amplifier circuits, and switching regulators.

The BSZ065N03LSATMA1 is capable of withstanding gate-drain voltages up to 100V, and enables high-speed switching with a maximum frequency of up to 2.2GHz. The device also features low gate, drain, and source capacitive parasitics, providing improved efficiency and power conservation.

Overall, the BSZ065N03LSATMA1 is an excellent choice for a wide range of electronic applications, providing improved system performance and low power consumption.

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