![BSZ068N06NSATMA1 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | BSZ068N06NSATMA1TR-ND |
Manufacturer Part#: |
BSZ068N06NSATMA1 |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 40A 8TSDSON |
More Detail: | N-Channel 60V 40A (Tc) 2.1W (Ta), 46W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
5000 +: | $ 0.27462 |
Vgs(th) (Max) @ Id: | 3.3V @ 20µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8-FL |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 6.8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSZ068N06NSATMA1 is a N-channel enhancement mode field effect transistor used in a variety of switch and amplifier applications. The BSZ068N06NSATMA1 is a 60 V, 6 A device with a very low on-resistance of just 0.040 ohms. This feature makes it particularly suitable for low voltage application areas such as power management, lighting, battery charging and motor control.
A field effect transistor (FET) is a semiconductor device that works by controlling the amount of current that flows between two terminals on the device. The functioning of a FET depends on the electric field produced by a small electric charge, which affects the shape and operation of the device. When the electric field is applied to the FET, it modifies its conductivity, which changes the amount of current flowing through it.
The BSZ068N06NSATMA1 is an N-channel enhancement mode FET. Enhancement mode FETs are transistors that are normally in the "off" state and require additional gate current to turn them on. This differs from depletion mode FETs which are normally in the "on" state and require a voltage of the opposite polarity to turn off the current.
The BSZ068N06NSATMA1 is particularly suited to low voltages due to its ultra-low on-resistance of 0.040 Ω. This feature reduces power loss and increases efficiency of the device, making it particularly suitable for applications in power management and battery charging. The low gate threshold voltage also ensures that the FET can be controlled by low level signals.
The BSZ068N06NSATMA1 is most commonly used as a switch in power management applications. It can also be used as an amplifier by controlling the current flow between the drain and the source. The FET has a very low input capacitance and high output current, making it ideal for driving high current loads.
The BSZ068N06NSATMA1 is also well suited to DC motor control applications. For these applications, the FET can be used to vary the amount of current flowing through the motor. If a low current is applied, the motor will run at a lower speed than if a higher current is applied. This feature makes the BSZ068N06NSATMA1 perfect for controlling the speed of DC motors.
The BSZ068N06NSATMA1 is a versatile device that is suitable for a variety of applications. Its high current ratings and low on-resistance make it perfect for SC motor control and power management applications, while its low gate threshold voltage allows it to be controlled by low level signals. When looking for a switch or amplifier device, the BSZ068N06NSATMA1 should be at the top of the list.
The specific data is subject to PDF, and the above content is for reference
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