BSZ0589NSATMA1

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TDSON-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	950pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	4.4 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	17A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BSZ0589NSATMA1 is a voltage-controlled metal–oxide–semiconductor field effect transistor (MOSFET) of the single type. It is developed by Smartcom and features a drain current of 15 A and a maximum power dissipation of 33 W. It is designed for efficient power management, providing high switching speeds and low static power consumption. As a result, BSZ0589NSATMA1 is widely used in a variety of applications in the fast-growing electronics industry.MOSFETs are electrically controlled semiconductor devices that can be used to control high-power electrical signals. They can be used to regulate the flow of current and the power applied to electrical components, allowing for the efficient control of power in a circuit. MOSFETs can be used for both voltage- and current-controlled operation. BSZ0589NSATMA1 is a single type MOSFET and like all MOSFETs, it features a three-terminal design with a source, drain, and gate.The source and drain terminals form part of a source-drain channel, while the gate is used to control the flow of current between the source and the drain. When voltage is applied to the gate, electrons in the source-drain channel are repelled, creating a path for current to flow between the source and the drain. As the voltage applied to the gate increases, the current flow can be modulated and controlled.BSZ0589NSATMA1 is designed for applications such as power converters and motor control, where high switching speeds and high efficiency are important. In these applications, BSZ0589NSATMA1 can replace more expensive and inefficient components, resulting in lower overall power consumption. The high efficiency of BSZ0589NSATMA1 means that it can provide higher power output with less power input, making it an attractive choice for applications that require high power output in a power-constrained environment.BSZ0589NSATMA1 is also designed for a wide variety of electronic equipment, such as power amplifiers, switching power supplies, and lighting equipment. It can be used in applications such as semiconductor manufacturing, where high current handling and low resistance are important. BSZ0589NSATMA1 can also be used as a load switch in industrial equipment, such as motors, robotic arms, and actuators.The high power handling capabilities of BSZ0589NSATMA1 are a result of its high current rating, low Gate-to-Source capacitance, and low Gate Threshold Voltage. Its low Gate Threshold voltage allows the MOSFET to switch rapidly from on to off, allowing for high switching speeds. Additionally, its low Gate-to-Source capacitance helps reduce power losses as the MOSFET is switched, allowing for a more efficient operation.Due to its high efficiency, reliability, and broad application range, BSZ0589NSATMA1 has become a popular choice for many power management applications. Its low power consumption, combined with its high current rating, low Gate-to-Source capacitance, and low Gate threshold voltage make it an attractive choice for designers of all kinds of power management applications. As a result, BSZ0589NSATMA1 is widely used in the fast-growing electronics industry.

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