Allicdata Part #: | BSZ0503NSIATMA1-ND |
Manufacturer Part#: |
BSZ0503NSIATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 20A 8SON |
More Detail: | N-Channel 30V 20A (Ta), 40A (Tc) 2.1W (Ta), 36W (T... |
DataSheet: | BSZ0503NSIATMA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TSDSON-8-FL |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BSZ0503NSIATMA1 is a single N-channel, EZTrench® MOSFET transistor specifically designed for high-side switching applications. Its wide voltage range (8V to 30V) makes it ideal for use in a variety of battery-powered, automotive, and industrial systems.
The BSZ0503NSIATMA1 utilizes N-channel MOSFET technology to provide a high switching capability, low on-resistance, and high current capability. An EZTrench® surface-channel trench process is also employed to lower the on-resistance of the transistor and reduce the thermal resistance.
The BSZ0503NSIATMA1 is used in high-side switching applications where it is necessary to switch the terminal voltage. Examples of these types of applications include motor control, load switching, power supplies, and battery management. Additionally, the transistor can be used in overvoltage protection circuits, startup circuits, and battery disconnect systems.
The characteristics of the BSZ0503NSIATMA1 are highly dependent on the gate voltage and source voltage. The gate voltage is typically between 4V and 12V while the source voltage is typically between 5V and 30V. At higher gate voltages, the on-resistance of the transistor increases, while at lower gate voltages, the on-resistance decreases.Likewise, the on-resistance increases as the source voltage increases and decreases as the source voltage decreases. The maximum current handling capacity of the transistor is 30A.
The working principle of the BSZ0503NSIATMA1 is based on the MOSFET switching mechanism. When an appropriate gate voltage is applied to the gate terminal, the transistor turns on and a current flows from the drain to the source. When the gate voltage is lowered below a certain threshold, the transistor turns off and no current can flow. This switching mechanism allows the transistor to be efficiently used in a variety of high-side switching applications.
In conclusion, the BSZ0503NSIATMA1 is a single N-channel EZTrench® MOSFET transistor designed for high-side switching applications. Its small size and wide voltage range make it ideal for use in many battery-powered, automotive, and industrial systems. By utilizing its MOSFET switching mechanism, the BSZ0503NSIATMA1 can be used for efficient high-side switching applications such motor control, load switching, power supplies, and battery management.
The specific data is subject to PDF, and the above content is for reference
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