BSZ096N10LS5ATMA1

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The BSZ096N10LS5ATMA1 is a top-of-the-line MOSFET from Stockstarts, designed for high-power, low-noise and low-switching loss applications. It is a high-speed, low RDS (ON) N-Channel Enhancement Mode Field Effect Transistor that is capable of providing the most reliable performance over a wide temperature range. It provides excellent switching speed, low On-resistance and diode-level RDS (ON) and breakdown voltage. It is also capable of providing excellent safety and reliability due to its superb thermal characteristics.

This advanced MOSFET is used in a wide array of electronic circuits, ranging from simple on/off switches to complex switching power supplies. In particular, it is often used in automotive, telecommunications, computer and consumer electronics applications. It is also used in home appliances, lighting, mobile phones, photo copiers and other high-power applications. The excellent thermal and moisture resistance makes it particularly well suited for extreme temperature and humidity environments.

The BSZ096N10LS5ATMA1 MOSFET has a maximum continuous DC drain source voltage of 600V and a maximum drain current of 10A. It is highly reliable and features a low RDS (ON) of 7.2mOhm. It also has a very high gain rate of up to 152 between the drain-source voltage and the drain-source current. It has a high reverse-transfer capacitance of 11nC and excellent fast switching response times that can reach up to 1nS.

The working principle of the BSZ096N10LS5ATMA1 MOSFET can be described as follows. A voltage applied to the gate terminal of the MOSFET will result in a conductive channel being created between the source and the drain terminals. This creates a low resistance path between the source and the drain and allows a high current to flow through the MOSFET. The optimal gate voltage can be determined by measuring the drain current with a current meter.

TheBSZ096N10LS5ATMA1 MOSFET is ideal for use in switching power supplies and other high-power applications. It features high current handling capacity, low switching losses and low RDS (ON). It is also highly reliable and has a wide temperature range capability, making it suitable for use in a wide range of temperature environments. Furthermore, its outstanding thermal and moisture resistance makes it an ideal choice for use in extreme temperature and humidity environments. All things considered, the BSZ096N10LS5ATMA1 is a highly advanced MOSFET that is capable of providing excellent performance for a wide range of applications.

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