BSZ018NE2LSIATMA1

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	PG-TSDSON-8-FL
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 69W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2500pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	36nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	1.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	22A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The BSZ018NE2LSIATMA1 is a single P-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is versatile and commonly used in a variety of applications. It is an advanced technology MOSFET produced using Fairchild Semiconductor’s advanced silicon-gate CMOS process which is especially suited for high power applications.

Application fields

MOSFETs, and in particular P-channel MOSFETs such as the BSZ018NE2LSIATMA1, are used in applications such as switching, DC/DC converters, audio circuit, motor control, battery management. Due to its small size, it is widely used in portable and battery powered applications due to its low power dissipation.The BSZ018NE2LSIATMA1 is suitable for use in applications where a low on-state resistance, high switching speed and low gate charge is of importance such as logic level switching and synchronous rectification. It is also useful for applications where efficient power dissipation is required for power supply, such as DC/DC converters.

Working principle

MOSFETs consist of a gate, source and drain electrodes which control the flow of the current. They can be either N-channel or P-channel types which are differentiated by their charge carriers. In this case, the BSZ018NE2LSIATMA1 is a P-Channel MOSFET which consists of P type carriers that are called holes.The MOSFET works by having the gate electrode allow the electric field to pass through and controls the voltage applied to the drain. The electric field causes the P-type carriers, the holes, to become negatively charged and migrate through silicon to the gate, thus allowing current to flow from the drain to the source electrode. The higher the voltage applied, the more the current would flow and the higher the on-state resistance.

Conclusion

The BSZ018NE2LSIATMA1 is a single P-channel MOSFET manufactured using advanced CMOS process. It is highly versatile, allowing it to be used for switching, DC/DC converters, audio circuit, motor control, and battery management. It is ideal for applications requiring efficient power dissipation, logic level switching, and synchronous rectification. The operating principle of the MOSFET is that electric field is used to control the flow of current, with the gate electrode controlling the flow and the P-type carriers, the holes, being positive charged.

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