BUZ30A E3045A

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 25V
Vgs (Max):	±20V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	130 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BUZ30A E3045A Application Field and Working PrincipleThe BUZ30A and E3045A are two of the most popular insulated-gate bipolar transistor (IGBT) devices available in today’s market. This article will discuss the application fields of these two devices, as well as their working principles. Application Field The BUZ30A and E3045A are both designed to be used in power tool motors, induction motors, and High power inverter-based motor control systems. These IGBTs are designed to be used in applications such as air conditioning equipment, welding equipment, UPS systems, and power supplies. These devices can be used in a wide variety of applications due to their low conduction losses, high switching and surge capabilities, as well as their ability to operate under harsh environmental conditions. Working Principle An IGBT is a type of transistor that combines the advantages of a MOSFET and a BJT. It has a MOSFET gate electrode for controlling current flow and a BJT collector-emitter for conduction. The BUZ30A and E3045A have a PN-structure with a gate electrode that acts like a switch to control the conduction of current through the device. When a forward voltage is applied to the gate of the IGBT, a high current will flow through the device. When the voltage is removed, the current will stop flowing.The BUZ30A and E3045A also have a built-in temperature sensor that will automatically adjust the current flow through the device in order to maintain a safe operating temperature. This ensures the safe operation of the device and helps to prevent damage due to overheating. The BUZ30A and E3045A are designed to operate in high power applications and can withstand high current pulses. They are also designed to be resistant to high-frequency noise and are capable of withstanding continuous overloads. ConclusionThe BUZ30A and E3045A are two of the most popular insulated-gate bipolar transistor (IGBT) devices currently available. They are designed for use in power tool motors, induction motors, and High power inverter-based motor control systems. These IGBTs have a PN-Structure and have a MOSFET gate electrode for controlling current flow and a BJT collector-emitter for conduction. They also have a built-in temperature sensor that will adjust the current flow through the device in order to maintain a safe operating temperature. The BUZ30A and E3045A are designed to operate in high power applications and can withstand high current pulses.

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