BUZ32H3045AATMA1

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BUZ32H3045AATMA1 is a single, N-channel MOSFET. It is widely used in application fields including lighting, audio, telecommunications and automotive equipment. This type of transistor features high-power, high drain-source breakdown voltage and low on-state resistance for low switching losses and higher system efficiency.

MOSFET transistors primarily work by controlling voltage and current flow between source and drain terminals. These transistors provide better control over voltage and current flow as compared to BJT transistors because they do not require continuous base current like BJT transistors. When there is no gate voltage applied to the MOSFET’s gate, the transistor will be in “off” mode, which prevents any current flow between the source and drain terminals. When a gate voltage is applied, the transistor will be in “on” mode, allowing current to flow between the source and drain terminals.

The BUZ32H3045AATMA1 is a single N-channel MOSFET and it is typically used as a low-side switch in medium to high-power circuits. It can be used in a wide variety of applications such as high-side LED drivers, audio amplifiers, DC/DC converters, power supplies and motor control systems. Additionally, this MOSFET is also suitable for load switch applications in automotive electronics.

The BUZ32H3045AATMA1 has a maximum drain-source voltage of 30V and a maximum drain current of 45A. This makes it a suitable choice for high-power applications that require handling of high current. Additionally, the transistor also offers low on-state resistance (RDS(on)), which ensures low conduction losses and ensures higher system efficiency. The transistor also has a maximum junction temperature of 150°C and a thermal resistance from junction to case of approximately 67°C/W.

The BUZ32H3045AATMA1 is a highly power efficient MOSFET and is a suitable choice for high power applications in a wide range of fields such as lighting, audio, telecommunication and automotive equipment. Its low on-state resistance and high drain-source voltage make it an ideal choice for high current applications. Additionally, its thermal protection features allow for safe operation even in high-temperature environments.

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