BUZ31 E3046

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BUZ31 E3046 is a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that has been designed to be used in many different electronic applications. It is a single-layer MOSFET, meaning that it consists of a single P-Channel MOSFET device. It is a high-performance device, capable of delivering a high performance that is also reliable and efficient. Due to its compact size and low-power consumption, it is an excellent choice for many applications, such as motor control and power switching.

The BUZ31 E3046 is a standard P-Channel MOSFET and is typically used in high-voltage, low-current switching applications. It is designed to have a breakdown voltage of 30 volts, a maximum current rating of 48 amps, a typical on-resistance of 50 milliohms and a thermal resistance of 200 milli-Ohm/degree Celsius. This device is capable of handling high voltage spikes, which can occur in certain applications. The maximum power dissipation for this device is also relatively high, at 40 watts.

The BUZ31 E3046 has a fast and precise switching speed, making it suitable for applications where a high speed response is necessary. Additionally, due to its low-power capability, it is able to reduce the power dissipation of the entire circuit, which can help to reduce energy costs. The device is also designed to have a low gate threshold voltage, which allows it to be used in circuits where low-power input control is needed.

The BUZ31 E3046 utilizes both N-Channel and P-Channel devices. These two different devices work together to control the voltage across the source and drain ports, as well as the current through the MOSFET channel. In a typical setup, the N-Channel device will act as the load, allowing current to flow from the drain to the source, while the P-Channel device will act as the switch, controlling the current flow from the source to the drain.

The BUZ31 E3046 is also designed to have a low gate charge, meaning that it does not require a lot of input power to operate. This makes it suitable for applications that require a low-power drive signal. Because of this, the device can also be used in circuits that have a low on-resistance, as well as circuits which require less noise.

The BUZ31 E3046 utilizes both a source and a gate region. The gate region is typically connected to an external gate voltage and is responsible for controlling the current flow through the source and drain ports of the device. The source region is connected to the drain and provides the device with its source voltage.

The working principle of this MOSFET device is based on an electrostatic force, which is generated between the gate and source regions. When the external gate voltage is applied, the electrons in the gate region are lifted up to the source region. This creates a barrier, which reduces the current from the source to the drain, thus allowing it to be controlled.

The BUZ31 E3046 is a versatile MOSFET device that can be used in numerous applications. It is particularly used in motor controls, power switching, and other high-voltage applications. It is a low-power, efficient, and reliable device which can improve the performance and power efficiency of circuits and systems.

The specific data is subject to PDF, and the above content is for reference