BUZ30AH3045AATMA1 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK (TO-263AB)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 25V
Vgs (Max):	±20V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	130 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BUZ30AH3045AATMA1 Application Field and Working Principle

The BUZ30AH3045AATMA1 is a n-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), which is a type of transistor used in many modern electronics. It is a single-package device, meaning it only takes up a small amount of space on a printed circuit board. The BUZ30AH3045AATMA1 is an example of a “HEXFET” (High Voltage Enhanced Field-Effect Transistor) which is designed to operate in higher voltages than standard MOSFETs can, and is commonly used for switching and power amplification.

Application Fields

MOSFETs are widely used across many different applications, from very small and portable consumer devices to large industrial machinery. Some of the common applications for MOSFETs include: switching (for relays and power converters), power amplification (for amplifying and switching audio signals, power supplies, and motor drives), and industrial controls. The BUZ30AH3045AATMA1 is well-suited to applications that require higher voltage and power capabilities than standard MOSFETs can provide. The BUZ30AH3045AATMA1 is commonly used in automotive electronics and industrial controls, as well as consumer electronics, such as laptops and cell phones.

Working Principle

MOSFETs operate on the principle of a “controlled current path”. This means that the voltage and current passing through the MOSFET is dependent on the MOSFET’s gate voltage; when the gate voltage is low, the MOSFET acts as an open switch, and when the gate voltage is high, the MOSFET acts as a closed switch. This makes the MOSFET an ideal device for creating on/off circuits, as well as for amplifying signals.

The BUZ30AH3045AATMA1 is a high-voltage MOSFET, which means that it can handle a greater range of voltages than a standard MOSFET. It can handle voltages up to 30V, which makes it suitable for use in automotive and industrial settings, where higher voltages are common. The BUZ30AH3045AATMA1 is also rated for a maximum power of 45W, which makes it a suitable choice for power amplification and motor drive applications.

MOSFETs are also commonly used for signal amplification, as they can provide a high levels of amplification with relatively low voltage and power requirements. The BUZ30AH3045AATMA1 is a gate stable device, which means that the gate voltage at which it is switched on and off is consistent, making it ideal for signal amplification. The BUZ30AH3045AATMA1 has a very low threshold voltage (Vgs), meaning it requires less voltage than other MOSFETs to switch on and off, making it more power efficient.

In conclusion, the BUZ30AH3045AATMA1 is a n-channel MOSFET which is well-suited to applications that require higher voltage and power capabilities. It is commonly used in automotive, industrial, and consumer electronics, and is ideal for switching, power amplification, and signal amplification applications.

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