Allicdata Part #: | BUZ31HXKSA1-ND |
Manufacturer Part#: |
BUZ31HXKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 14.5A TO220-3 |
More Detail: | N-Channel 200V 14.5A (Tc) 95W (Tc) Through Hole PG... |
DataSheet: | BUZ31HXKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 95W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1120pF @ 25V |
Vgs (Max): | ±20V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 9A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 14.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The BUZ31HXKSA1 is a type of power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is commonly used in electrical and electronic circuits. It is a single power MOSFET and features a single transistor structure with high blocking capability. This makes the BUZ31HXKSA1 suitable for higher blocking voltage applications. Also, the high breakdown voltage feature makes this MOSFET ideal for high power applications.
The power MOSFET is a field-effect transistor that works in a similar way to other transistors. An electric field is created by a supply current applied to the gate electrode, which attracts charges through the MOS capacitor and forms an inversion layer in the semiconductor channel. This inversion layer acts as a conducting channel which modulates the current flow between drain and source of the MOSFET. The transistor is turned on or off depending on the current applied to the gate electrode.
In addition to this, the BUZ31HXKSA1 MOSFET has many advantages like low on-state resistance, fast switching speed, high efficiency, low power consumption and high reliability. Its wide operating temperature range makes it suitable for use in high-temperature environments. Moreover, it is capable of handling very large voltage and current levels which makes it an ideal choice for power management in industrial, automotive and consumer applications.
The BUZ31HXKSA1 is commonly used in applications such as lighting control, motor drives, power inverters, power supplies, motor speed control, automotive systems and industrial process control. In motor drives, it is used for efficient power management supplying the power needed for the motor at the correct speed. It is also used in power inverters to efficiently convert DC to AC voltage. It can be used in power supplies to control the current flow and provide a stable power supply. In automotive applications, it can be used to regulate engine or transmission operation.
The BUZ31HXKSA1 MOSFET offers many advantages and is an ideal choice for a wide range of power management applications. Its single transistor structure, fast switching speed, low on-state resistance, high breakdown voltage and high current capability make it an ideal choice for high power applications. It is also a very reliable component with a wide operating temperature range making it suitable for use in high-temperature environments.
The specific data is subject to PDF, and the above content is for reference
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