Allicdata Part #: | BUZ31E3045A-ND |
Manufacturer Part#: |
BUZ31 E3045A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 14.5A TO263 |
More Detail: | N-Channel 200V 14.5A (Tc) 95W (Tc) Surface Mount D... |
DataSheet: | BUZ31 E3045A Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D²PAK (TO-263AB) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 95W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1120pF @ 25V |
Vgs (Max): | ±20V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 9A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BUZ31 E3045A transistors are commonly used for power amplification applications in commercial and hobby circuits. They are a type of Field Effect Transistor (FET), more specifically a type called a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) . This type of transistor provides very high gain, low power dissipation and excellent linearity in the power amplifier circuit.
The BUZ31 E3045A transistor consists of three connections and comprises of three terminal connections. The source (S) terminal is the connection point where current is injected into the transistor, while the drain (D) terminal is the point where current leaves the device. The gate (G) is the control electrode which controls the flow of current between the source and the drain.
In most circuits, the BUZ31 E3045A transistor is used as a switch. When the gate is supplied with a positive voltage, current will flow through the source-drain channel, allowing the device to be used as a switch. When the gate is not connected to a positive voltage, the source-drain channel is completely closed thus stopping current from flowing.
The BUZ31 E3045A transistors have excellent linearity characteristics which make them ideal for use in power amplifiers. This type of FET is unique in its ability to simultaneously provide high gain and low power dissipation. This allows power amplifiers to achieve maximum efficiency without wasting power. It is because of this characteristic that the BUZ31 E3045A is the preferred choice for many commercial and hobby circuits.
The BUZ31 E3045A is also used in circuits that require high speed switching, such as switching power supplies or switching regulators. The high-speed switching ability of this device allows circuits to have fast response times and is essential in applications where high-frequency power generation is required.
Due to its broad range of applications, the BUZ31 E3045A is an important device in modern electronics and is used in many different types of circuits. From power amplifiers to switching power supplies, this type of FET is an essential component for modern electronics.
The specific data is subject to PDF, and the above content is for reference
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