BUZ31L H

Vgs(th) (Max) @ Id:	2V @ 1mA
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	95W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 25V
Vgs (Max):	±20V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	200 mOhm @ 7A, 5V
Drive Voltage (Max Rds On, Min Rds On):	5V
Current - Continuous Drain (Id) @ 25°C:	13.5A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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BUZ31L H is a high efficiency N-channel Enhancement Mode MOSFET transistor and belongs to the family of single-gate transistors. It is mainly used in power application fields and its working principle can be explained as following.

Introduction to BUZ31L H Application Fields

The BUZ31L H MOSFET transistor is mainly employed in power application fields, such as solar energy systems, DC-DC converters, high frequency and high voltage power supplies, uninterruptible power supplies, motor speed controllers and motor drives.The BUZ31L H has superior switching performance, low conduction losses and high maximum power capabilities. It also exhibits a low gate threshold voltage and fast switching time which make it suitable for a wide range of applications.

BUZ31L H Working Principle

The BUZ31L H utilizes the principle of field-effect transistors (FETs) to accomplish its high efficiency when applied and operated accurately. FETs, unlike their bipolar counterparts, are unipolar devices, meaning they are composed of either electrons or holes as their active conducting electrons.In FETs, such as the BUZ31L H, an electric field controls the current flow by manipulating the conductivity of the channel, which is formed between the source and drain terminals. Applying an electric field between the control and source terminals, the conductivity of the channel is modulated. When the control gate voltage is below the threshold, a depletion region forms and the conduction gets cut off. On the other hand, applied gate voltages higher than the threshold level cause an inversion layer which increases the conductivity of the channel, allowing current to flow through it.The BUZ31L H, as single-gate FETs, operate basically in the same way as normal FETs, but with some additional features. Single-gate FETs use a single gate to control the operation of the FET, thereby simplifying the design, making them compatible with a smaller form factor, and providing faster turn-on/turn-off times than other FETs.

Conclusion

The BUZ31L H is a high efficiency N-channel Enhancement Mode MOSFET transistor used in power application fields. It is suitable for a wide range of applications thanks to its low gate threshold voltage, fast switching time and high maximum power capabilities. It utilizes the principle of FETs, but with some additional features of single-gate FETs, such as simplified design and smaller form factor.

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