Allicdata Part #: | BUZ31LIN-ND |
Manufacturer Part#: |
BUZ31L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 200V 13.5A TO220AB |
More Detail: | N-Channel 200V 13.5A (Tc) 95W (Tc) Through Hole PG... |
DataSheet: | BUZ31L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | PG-TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 95W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±20V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 7A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUZ31L is a power MOSFET (metal-oxide semiconductor field effect transistor) that is widely used in power electronics. It is a type of single MOSFET, which is a simple form of FET (Field Effect Transistor) that is designed for high-speed switching applications. It is primarily used in the design and fabrication of power management circuits, such as DC-DC converters and pulse-width modulators.
The BUZ31L is a N-channel MOSFET, with a drain-source breakdown voltage of 320V and a gate-source voltage of 20V. It is capable of dissipating up to 8W of power, making it suitable for applications where high power dissipation is required. It also has a high level of accuracy in combination with its fast switching speeds and low on-resistance, making it an ideal choice for Switch Mode Power Supply (SMPS) and pulse-width-modulation (PWM) switching applications.
The basic working principle of the BUZ31L involves the use of an electric field that is generated by the Gate of the MOSFET to control the flow of current between the Drain and the Source. When the Gate is at a high potential, it attracts electrons to the channel connecting the Drain and the Source, creating a conductive path. This path of current is known as the "on" state, and in this state, the BUZ31L can be used as a switch to control the flow of current. When the Gate is at a low potential, the electrons are unable to move, and the device is in the "off" state, which will block the flow of current.
The BUZ31L is designed for applications where fast switching is required, and its high-speed switching capabilities make it a popular choice for motor control, DC-DC converters, and in high-frequency circuits. It is also often employed in the design of power electronic systems such as variable speed drives, inverters, and motor drives. As it is a high-power device, the BUZ31L is also suitable for use in high-current applications, where a high-power device is required.
In addition to its power management applications, the BUZ31L is used in the design of audio amplifiers and communication systems. This is due to its high level of translation accuracy and fast switching speeds, which are ideal for meeting the demands of these applications. The BUZ31L is also well-suited for use in switching circuits, where its high-speed switching capabilities make it an ideal choice for controlling the flow of current.
Overall, the BUZ31L is a high-performance power MOSFET that is widely used in power electronics and other high-speed switching applications. It is capable of dissipating high levels of power and offers a high level of accuracy and fast switching speeds. As such, it is an ideal choice for applications where high power dissipation and high-speed switching are required.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BUZ30AHXKSA1 | Infineon Tec... | 1.74 $ | 344 | MOSFET N-CH 200V 21A TO22... |
BUZ30A E3045A | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 21A TO-2... |
BUZ31 | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 14.5A TO... |
BUZ31 E3045A | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 14.5A TO... |
BUZ31 E3046 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 14.5A TO... |
BUZ31L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 13.5A TO... |
BUZ31L E3044A | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 13.5A TO... |
BUZ32 | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 9.5A TO2... |
BUZ32 E3045A | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 9.5A D2P... |
BUZ32H3045AATMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 9.5A TO-... |
BUZ30A | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 21A TO-2... |
BUZ31HXKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 14.5A TO... |
BUZ31L H | Infineon Tec... | -- | 1000 | MOSFET N-CH 200V 13.5A TO... |
BUZ31H3046XKSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 200V 14.5A TO... |
BUZ32 H | Infineon Tec... | 1.3 $ | 146 | MOSFET N-CH 200V 9.5A TO2... |
BUZ31 H3045A | Infineon Tec... | 0.71 $ | 1000 | MOSFET N-CH 200V 14.5A TO... |
BUZ30AH3045AATMA1 | Infineon Tec... | 0.83 $ | 1000 | MOSFET N-CH 200V 21A TO-2... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...