BUZ32 H Allicdata Electronics
Allicdata Part #:

BUZ32H-ND

Manufacturer Part#:

BUZ32 H

Price: $ 1.30
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 9.5A TO220-3
More Detail: N-Channel 200V 9.5A (Tc) 75W (Tc) Through Hole PG-...
DataSheet: BUZ32 H datasheetBUZ32 H Datasheet/PDF
Quantity: 146
1 +: $ 1.17180
10 +: $ 1.05777
100 +: $ 0.84981
Stock 146Can Ship Immediately
$ 1.3
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
Vgs (Max): ±20V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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BUZ32H is a silicon N-Channel enhancement type MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). It is mainly used in power amplifiers and high-power switching circuits and provides a high performance solution for switching circuits. The BUZ32H is the most modern type of MOSFET commonly available for applications where moderate power levels and high switching speed are required.

The MOSFET works on the principle that when a voltage is applied to the gate terminal of the MOSFET, it will act like a capacitor and the amount of current passing through the device will be controlled by the size of the applied voltage. When the applied voltage is high enough, the current passing through the device will reach the maximum level. The voltage required to turn on the MOSFET is called the Gate Threshold Voltage (GTV).

The BUZ32H is a high power MOSFET that provides high current carrying capacity and low on-resistance. It has an exceptionally low input voltage and is available in an array of packages. The BUZ32H can be used in a wide array of applications including high power switching and battery management. It is also used in audio power amplifiers, DC/DC converters and motor drivers.

The BUZ32H has excellent switching characteristics and can be easily configured to operate with very low gate thresholds and up to extremely high currents. Its on-resistance is extremely low and can be adjusted by varying the gate voltage. This makes the BUZ32H ideal for applications requiring high speed, high current switching or high efficiency.

The BUZ32H can support a wide range of gate and drain voltages with an RDS(ON) that holds steady over a large drain-source voltage range. This makes it suitable for a wide range of operating environments, from automotive and aerospace to industrial.

The BUZ32H is also very easy to use with power switches, making it an ideal device for applications requiring high power switching and high speed response. It is also easier to use with high voltage rectifiers, allowing for more efficient power management in rectifying applications.

The BUZ32H is the perfect device for applications where low power dissipation, high switching speed and high precision are desired. With its wide selection of packages and easy configuration, the BUZ32H is the ideal choice for high power switching and high speed switching applications.

The specific data is subject to PDF, and the above content is for reference

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