BUZ31H3046XKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BUZ31H3046XKSA1 Application Field and Working Principle

The BUZ31H3046XKSA1 is a type of N-channel Enhancement Mode Power Field-Effect Transistor (N-FET) with a rated voltage of 600V/10A V(BR). The device is designed for use in a variety of applications, including power switching such as power supply, lighting control, and motor control. It is also suitable for use in automotive and industrial applications.

In general, the main components of an N-FET include an insulating gate, source, drain and body. When an external voltage is applied, the gate insulator is polarized to allow the flow of electrons between source and drain. The electrons are attracted to the source and an electrical current is drawn out of the source, as the gate voltage is increased.

The BUZ31H3046XKSA1 is a special type of N-FET called an Enhancement mode N-FET (ENFET). Unlike the standard N-FET, where the electric field modulation is only present when the gate voltage is greater than the threshold voltage, the ENFET is an active device even at voltages lower than the threshold voltage. This makes it suitable for use in applications that require high switching frequency and low power dissipation.

The BUZ31H3046XKSA1 has several advantages over traditional N-FETs. It is fast-switching and has low on-state resistance, making it suitable for high frequency applications. It also has a high breakdown voltage and can be used in automotive and industrial applications. Its low gate charge reduces switching losses, while its high power dissipation allows it to be used in high power applications.

The BUZ31H3046XKSA1 is designed to be used in a variety of applications, such as power supply, lighting control, and motor control. It is also suitable for use in automotive and industrial applications. It is a fast-switching device, with low on-state resistance and high breakdown voltage. It has a high power dissipation and low gate charge, making it suitable for high-frequency and high-power applications.

The specific data is subject to PDF, and the above content is for reference