BUZ31

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The BUZ31 is a N-channel enhancement mode transistor specifically designed for switched-mode power supply (SMPS). It is specifically designed for low-on-resistance, low-threshold voltage, and low-gate charge characteristics. Due to its exceptional performance, this transistor finds several applications in such SMPSs, including the switching load of a high current, high frequency, low on-state losses, and low-power dissipation. Its unique characteristics also make it suitable for use in application-specific integrated circuits, and DC-DC converters.

The BUZ31 is a 500V vertical N-channel MOSFET, constructed with a low-temperature co-fired ceramic (LTCC) package. It is designed with integrated electrostatic discharge (ESD) protection, making it suitable for use in automotive and other industrial environments. It is built around a vertical N-channel structure, which has good thermal and electrical properties, compared to planar structures. These properties result in lower power dissipation and better power transfer efficiency.

The BUZ31 is specified for a drain-source voltage (Vds) of 500V and a drain current (Id) of 6.5A using a wide range of gate (Vgs) conditions from 0.5V to 30V. It has a minimum drain-source breakdown voltage (BVdss) of 500V and a maximum drain-source on-state resistance (Rds) of 7.1mΩ at Vgs = 10V. The maximum drain-source gate threshold voltage (Vth) is 3V. The gate charge Qg is expressed in nanocoulomb (nC) and it is specified at 10V, 5.3V and 2.5V.

The working principle of the BUZ31 is based on a vertical N-channel MOSFET structure, which is formed when a silicon layer, usually of n-type doping, is formed on the single crystal silicon substrate. This silicon layer will act as the transistor channel. When a voltage is applied to the gate electrode, it causes a current to flow between the drain and the source. This is known as the "on state" of the transistor. In this state, the current between the drain and the source will be regulated and controlled by the gate voltage (Vgs). If the gate voltage is reduced, the current between the drain and the source will be reduced, and the transistor will be in the "off state".

The BUZ31 is typically used in SMPSs and switching DC-DC converters that require low-on-resistance, low-threshold voltage, and low-gate charge characteristics. The wide operating temperature range and integrated ESD protection make it suitable for use in harsh environments. Additionally, its low on-state losses, low power dissipation, and high current capability make it highly efficient in power transfer applications. Furthermore, its integrated protection and low-on-resistance characteristics makes it suitable for a wide range of SMPS applications.

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