BUZ30A Allicdata Electronics
Allicdata Part #:

BUZ30AIN-ND

Manufacturer Part#:

BUZ30A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 200V 21A TO-220AB
More Detail: N-Channel 200V 21A (Tc) 125W (Tc) Through Hole PG-...
DataSheet: BUZ30A datasheetBUZ30A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: PG-TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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BUZ30A is a silicon sexitron power transistor with an enhanced performance, which is suitable for applications requiring high speed switching and high current capabilities. The device can operate up to 80A and 50V, and its power dissipation is up to 180V. BUZ30A is mainly designed for voltage-driven applications, and can be used in a wide range of power management circuit applications, for example, motor control, battery management, and dc-to-dc converters. In this article, we will discuss the application fields and working principles of BUZ30A.

Application Fields of BUZ30A

BUZ30A is mainly used in voltage-driven power management and high current circuit applications. It is suitable for applications where fast switching and high output current are required. Voltage-controlled Load Switching Applications: BUZ30A can be used in situations where the load needs to be switched quickly and precisely at a particular voltage level. This application can be found in motor control circuits and battery management systems. Moreover, the device can handle a higher load current than other power transistors, and its high current capability makes it a good choice for high power applications. DC-to-DC Converters: BUZ30A can also be used in dc-to-dc converters to provide precise voltages. In this application, the device is able to switch quickly between different output voltages, and it can provide a higher load current than other power transistors.

Working Principle of BUZ30A

BUZ30A is based on the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) technology. The device consists of two p-type and two n-type layers, which are arranged in an integrated circuit (IC), along with a gate electrode. When a voltage is applied to the gate, a small electric current flows from the source to the drain, allowing the device to operate as a switch. The device\'s voltage-control operation is enabled by the fact that the gate voltage controls the current flow, allowing for precise voltage regulation. As the voltage drops, the current drops, and the device ceases to conduct.

The device is designed to operate at high frequencies, allowing for fast switching and high power output. The device also has a high voltage rating, allowing it to be used in applications that require high voltage control. Additionally, the device is able to control higher load currents than other power transistors, making it a good choice for high power applications.

BUZ30A is a high performance power transistor, which has great potential in power management applications requiring fast switching and high current capabilities. It is suitable for applications such as motor control, battery management and dc-to-dc converters. Moreover, the device is based on the MOSFET technology, which enables voltage-control operation, and it can handle higher load current than other power transistors.

The specific data is subject to PDF, and the above content is for reference

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