CSD23280F3

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The CSD23280F3 is a high-density silicon carbide N-Channel MOSFET developed by Cree Inc. It is an advanced device technology which presents an innovative way of packaging high performance power switching devices. This MOSFET has been designed for a variety of high power switching applications including Class D Audio, Power Factor Correction (PFC) circuits and DCDC converters.

The CSD23280F3 is an advanced N-channel MOSFET which utilizes the latest silicon carbide technology from Cree to offer the ultimate in power efficiency and switching performance. This MOSFET has a Logic Level Gate threshold voltage of 2.1 volts, providing a low gate drive requirement and making it ideal for applications requiring high current switching. The device features a 20mohm RDS(on) at 10V giving it a robust on-state resistance, making it suitable for high switching frequency applications.

The main application fields for the CSD23280F3 are Class D Audio amplifiers, Power Factor Correction (PFC) circuits, DCDC converters, motor control and other applications requiring high current switching. It also finds applications in traction drive systems and electric vehicles, due to its low on-state resistance.

The working principle behind the CSD23280F3 is simple. It is a voltage controlled device which uses a gate voltage to control the current flowing through it. When a small positive bias is applied to the gate terminal, the resistance between the source and drain terminals is lowered, thus allowing more current to flow. When no voltage is applied to the gate terminal, the resistance between the source and drain terminals is increased, thus reducing the current flowing through the device.

The CSD23280F3 is an advanced device which has been designed to provide high power switching efficiency and robust operation at high switching frequencies. The device is an ideal choice for applications which require high current switching, such as Class D Audio, PFC circuits and DCDC converters. It also finds use in Electric Vehicle applications due to its low on-state resistance.

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